@inproceedings{1ed72f02400848e18dd96f085f69fda9,
title = "High photothermal properties in silicon nanostructures",
abstract = "This research describes the p-type nanostalactites (p-type NS) with high photothermal conversion capability has been demonstrated by rapid INC process without extra heat treatment. In optical property, p-type NS has ultralow reflectance below 5 % and high light absorption due to rough structures in the broadband wavelength (350 nm-1100 nm). It looks like a black body. Silicon, an indirect band material, can release thermal energy during the recombination process of photo-generated electron-hole pairs. P-type NS converts photon energy into heat rapidly and then photothermal effect occurs. Then, the temperature change of p-type NS is faster in 10 second than bulk p-type silicon. These nanostructures can not only enhance thermal conversion efficiency but be regarded as a great heat absorber.",
author = "Ren, {Ting Ting} and Wei, {Mao Qugn} and Hsiao, {Chin Chiang} and Chen, {Bo Yi} and Li, {Mei Yi} and Liou, {Jui Min} and Fu-Hsiang Ko and Lai, {Yu Sheng}",
year = "2016",
month = aug,
day = "15",
doi = "10.1109/AM-FPD.2016.7543672",
language = "English",
series = "Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "219--221",
booktitle = "Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices",
address = "United States",
note = "23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 ; Conference date: 06-07-2016 Through 08-07-2016",
}