High photoresponsivity of pentacene-based organic thin-film transistors with UV-treated PMMA dielectrics

Hsiao-Wen Zan*, Kuo H. Yen

*此作品的通信作者

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

A simple UV-treatment process for poly(methyl methacrylate) (PMMA) dielectric is proposed to enhance photoresponsivity of pentacene-based organic thin-film transistors. The UV treatment creates excess negatively charged sites on the PMMA dielectric, which makes the device exhibit a large photoinduced current and prolongs persistent conductance recovery. In order to describe time-dependent photoinduced current, double-time constant equations are proposed. Based on time-constant fittings, slow-varied responses are found to be influenced by the UV treatment. The rapid-varied response is independent of gate bias and UV treatment. A plausible model for spatial carrier distribution is discussed and proposed to describe this observed phenomenon.

原文English
期刊Electrochemical and Solid-State Letters
11
發行號8
DOIs
出版狀態Published - 23 6月 2008

指紋

深入研究「High photoresponsivity of pentacene-based organic thin-film transistors with UV-treated PMMA dielectrics」主題。共同形成了獨特的指紋。

引用此