High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping

Po Hsun Ho*, Yu Ying Yang, Sui An Chou, Ren Hao Cheng, Po Heng Pao, Chao Ching Cheng, Iuliana Radu, Chao Hsin Chien*

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Because of the lack of contact and spacer doping techniques for two-dimensional (2D) transistors, most high-performance 2D devices have been produced with nontypical structures that contain electrical gating in the contact regions. In the present study, we used chloroauric acid (HAuCl4) as a strong p-dopant for WSe2 monolayers used in transistors. The HAuCl4-doped devices exhibited a record-low contact resistance of 0.7 kΩ·μm under a doping concentration of 1.76 × 1013 cm-2. In addition, an extrinsic carrier diffusion phenomenon was discovered in the HAuCl4-WSe2 system. With a suitably designed spacer length for doping, a normally off, high-performance underlap top-gate device can be produced without the application of additional gating in the contact and spacer regions.

原文English
頁(從 - 到)10236-10242
頁數7
期刊Nano letters
23
發行號22
DOIs
出版狀態Published - 22 11月 2023

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