High-performance ultraviolet 385-nm GaN-based LEDs with embedded nanoscale air voids produced through atomic layer deposition and Al₂O₃ passivation

Keyphrases

• High Performance 100%
• Air Voids 100%
• GaN-based Light-emitting Diodes 100%
• Atomic Layer Deposition 100%
• Al2O3 Passivation 100%
• Ultraviolet Light-emitting Diode (UV-LED) 66%
• Nanostructures 33%
• Sidewall 33%
• Light-emitting Devices 33%
• High Power 33%
• Light Output 33%
• Al2O3 Dielectric 33%
• Light Extraction Efficiency 33%
• Intermediate Media 33%
• Passivated 33%
• High Power Efficiency 33%
• Threading Dislocation 33%
• Atomic Layer Deposition Method 33%
• Internal Quantum Efficiency 33%
• Ultraviolet Light Emission 33%

Engineering

• Passivation 100%
• Light-Emitting Diode 100%
• Nanoscale 100%
• Ultraviolet Light 100%
• Atomic Layer Deposition 100%
• Air Void 100%
• Deposition Method 25%
• Side Wall 25%
• Dielectrics 25%
• Light Output Power 25%
• Nanomaterial 25%
• Light Extraction Efficiency 25%
• Threading Dislocation 25%
• Emitting Device 25%
• Internal Quantum Efficiency 25%
• Light Emission 25%

Material Science

• Light-Emitting Diode 100%
• Al2O3 100%
• Nanostructure 25%
• Dielectric Material 25%