High-performance ultraviolet 385-nm GaN-based LEDs with embedded nanoscale air voids produced through atomic layer deposition and Al2O3 passivation

Che Yu Liu; Chia Yen Huang; Pei Yu Wu; Jhih Kai Huang; Tsung-Sheng Kao; An Je Zhou; Da Wei Lin; Yew-Chuhg Wu; Chun Yen Chang; Hao-Chung Kuo

doi:10.1109/LED.2016.2532352

High-performance ultraviolet 385-nm GaN-based LEDs with embedded nanoscale air voids produced through atomic layer deposition and Al₂O₃ passivation

Che Yu Liu, Chia Yen Huang, Pei Yu Wu, Jhih Kai Huang, Tsung-Sheng Kao, An Je Zhou, Da Wei Lin, Yew-Chuhg Wu, Chun Yen Chang, Hao-Chung Kuo

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

This letter developed the high-performance GaN-based light-emitting diodes (LEDs) for ultraviolet (UV) light emission at 385 nm with the light output power enhanced by up to 52% compared with that of the conventional UV-LEDs. The high-power-efficiency UV-LEDs include sidewall-passivated Al₂O₃ dielectric nanoscale air voids, which were created using the atomic layer deposition method and act as intermediate media for improving the internal quantum efficiency, reducing threading dislocation, and relaxing strain. The fabricated air void nanostructure also enhanced the light extraction efficiency by ∼32.7%, resulting in a high-power UV light-emitting device.

原文	American English
文章編號	7419236
頁（從 - 到）	452-455
頁數	4
期刊	Ieee Electron Device Letters
卷	37
發行號	4
DOIs	https://doi.org/10.1109/LED.2016.2532352
出版狀態	Published - 2月 2016

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10.1109/LED.2016.2532352

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Liu, C. Y., Huang, C. Y., Wu, P. Y., Huang, J. K., Kao, T.-S., Zhou, A. J., Lin, D. W., Wu, Y.-C., Chang, C. Y., & Kuo, H.-C. (2016). High-performance ultraviolet 385-nm GaN-based LEDs with embedded nanoscale air voids produced through atomic layer deposition and Al₂O₃ passivation. Ieee Electron Device Letters, 37(4), 452-455. 文章 7419236. https://doi.org/10.1109/LED.2016.2532352

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title = "High-performance ultraviolet 385-nm GaN-based LEDs with embedded nanoscale air voids produced through atomic layer deposition and Al2O3 passivation",

abstract = "This letter developed the high-performance GaN-based light-emitting diodes (LEDs) for ultraviolet (UV) light emission at 385 nm with the light output power enhanced by up to 52% compared with that of the conventional UV-LEDs. The high-power-efficiency UV-LEDs include sidewall-passivated Al2O3 dielectric nanoscale air voids, which were created using the atomic layer deposition method and act as intermediate media for improving the internal quantum efficiency, reducing threading dislocation, and relaxing strain. The fabricated air void nanostructure also enhanced the light extraction efficiency by ∼32.7%, resulting in a high-power UV light-emitting device.",

keywords = "Light-emitting diodes, Nanotechnology, Optoelectronic devices",

author = "Liu, {Che Yu} and Huang, {Chia Yen} and Wu, {Pei Yu} and Huang, {Jhih Kai} and Tsung-Sheng Kao and Zhou, {An Je} and Lin, {Da Wei} and Yew-Chuhg Wu and Chang, {Chun Yen} and Hao-Chung Kuo",

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doi = "10.1109/LED.2016.2532352",

language = "American English",

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AU - Liu, Che Yu

AU - Huang, Chia Yen

AU - Wu, Pei Yu

AU - Huang, Jhih Kai

AU - Kao, Tsung-Sheng

AU - Zhou, An Je

AU - Lin, Da Wei

AU - Wu, Yew-Chuhg

AU - Chang, Chun Yen

AU - Kuo, Hao-Chung

PY - 2016/2

Y1 - 2016/2

N2 - This letter developed the high-performance GaN-based light-emitting diodes (LEDs) for ultraviolet (UV) light emission at 385 nm with the light output power enhanced by up to 52% compared with that of the conventional UV-LEDs. The high-power-efficiency UV-LEDs include sidewall-passivated Al2O3 dielectric nanoscale air voids, which were created using the atomic layer deposition method and act as intermediate media for improving the internal quantum efficiency, reducing threading dislocation, and relaxing strain. The fabricated air void nanostructure also enhanced the light extraction efficiency by ∼32.7%, resulting in a high-power UV light-emitting device.

AB - This letter developed the high-performance GaN-based light-emitting diodes (LEDs) for ultraviolet (UV) light emission at 385 nm with the light output power enhanced by up to 52% compared with that of the conventional UV-LEDs. The high-power-efficiency UV-LEDs include sidewall-passivated Al2O3 dielectric nanoscale air voids, which were created using the atomic layer deposition method and act as intermediate media for improving the internal quantum efficiency, reducing threading dislocation, and relaxing strain. The fabricated air void nanostructure also enhanced the light extraction efficiency by ∼32.7%, resulting in a high-power UV light-emitting device.

KW - Light-emitting diodes

KW - Nanotechnology

KW - Optoelectronic devices

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M1 - 7419236

ER -

High-performance ultraviolet 385-nm GaN-based LEDs with embedded nanoscale air voids produced through atomic layer deposition and Al2O3 passivation

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High-performance ultraviolet 385-nm GaN-based LEDs with embedded nanoscale air voids produced through atomic layer deposition and Al₂O₃ passivation