High-performance ultraviolet 385-nm GaN-based LEDs with embedded nanoscale air voids produced through atomic layer deposition and Al2O3 passivation

Che Yu Liu, Chia Yen Huang, Pei Yu Wu, Jhih Kai Huang, Tsung-Sheng Kao, An Je Zhou, Da Wei Lin, Yew-Chuhg Wu, Chun Yen Chang, Hao-Chung Kuo

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

This letter developed the high-performance GaN-based light-emitting diodes (LEDs) for ultraviolet (UV) light emission at 385 nm with the light output power enhanced by up to 52% compared with that of the conventional UV-LEDs. The high-power-efficiency UV-LEDs include sidewall-passivated Al2O3 dielectric nanoscale air voids, which were created using the atomic layer deposition method and act as intermediate media for improving the internal quantum efficiency, reducing threading dislocation, and relaxing strain. The fabricated air void nanostructure also enhanced the light extraction efficiency by ∼32.7%, resulting in a high-power UV light-emitting device.

原文American English
文章編號7419236
頁(從 - 到)452-455
頁數4
期刊IEEE Electron Device Letters
37
發行號4
DOIs
出版狀態Published - 2月 2016

指紋

深入研究「High-performance ultraviolet 385-nm GaN-based LEDs with embedded nanoscale air voids produced through atomic layer deposition and Al2O3 passivation」主題。共同形成了獨特的指紋。

引用此