High-performance submicrometer ZnON thin-film transistors with record field-effect mobility

Chin I. Kuan, Horng-Chih Lin, Pei-Wen Li, Tiao Yuan Huang

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

In this letter, we demonstrate 0.6-μm ZnON thin-film transistors (TFTs) with the field-effect mobility of 71 cm2/V-sec, which to the best of our knowledge is the highest value ever reported on submicrometer oxide-semiconductor TFTs. The drive current, field-effect mobility, and subthreshold slope of ZnON TFTs are significantly improved as compared with their counterpart ZnO TFTs of the same channel dimensions and structure. Such an improvement in the field-effect mobility primarily results from a considerable reduction in the series source/drain (S/D) resistances because of suppression in an interfacial layer formation between Al S/D pads and the channel layer.

原文American English
文章編號2518404
頁(從 - 到)303-305
頁數3
期刊IEEE Electron Device Letters
37
發行號3
DOIs
出版狀態Published - 1 3月 2016

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