High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET with Low Thermal Budget Process

Chung Chun Hsu; Yi He Tsai; Che Wei Chen; Jyun Han Li; Yu Hsien Lin; Yao Jen Lee; Guang Li Luo; Chao-Hsin Chien

doi:10.1109/LED.2015.2501841

High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET with Low Thermal Budget Process

Chung Chun Hsu, Yi He Tsai, Che Wei Chen, Jyun Han Li, Yu Hsien Lin, Yao Jen Lee, Guang Li Luo, Chao-Hsin Chien^*

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

摘要

We present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (Φ_Bn) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 10⁵ at the applied voltage of |V_a|=1 V. Our quantum-well pMOSFET exhibited a high I_ON/I_OFF ratio of ∼ 10⁷(I_S) and a moderate subthreshold swing of 166 mV/decade.

原文	English
文章編號	7331593
頁（從 - 到）	8-11
頁數	4
期刊	IEEE Electron Device Letters
卷	37
發行號	1
DOIs	https://doi.org/10.1109/LED.2015.2501841
出版狀態	Published - 1 1月 2016

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10.1109/LED.2015.2501841

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@article{15e7f2ba1f6b454594191a9e1ea26e0c,

title = "High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET with Low Thermal Budget Process",

abstract = "We present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (ΦBn) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 105 at the applied voltage of |Va|=1 V. Our quantum-well pMOSFET exhibited a high ION/IOFF ratio of ∼ 107(IS) and a moderate subthreshold swing of 166 mV/decade.",

keywords = "Microwave-activated annealing (MWA), NiSiGe, PMOSFET, Schottky barrier height, quantum well (QW)",

author = "Hsu, {Chung Chun} and Tsai, {Yi He} and Chen, {Che Wei} and Li, {Jyun Han} and Lin, {Yu Hsien} and Lee, {Yao Jen} and Luo, {Guang Li} and Chao-Hsin Chien",

year = "2016",

month = jan,

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doi = "10.1109/LED.2015.2501841",

language = "English",

volume = "37",

pages = "8--11",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET with Low Thermal Budget Process

AU - Hsu, Chung Chun

AU - Tsai, Yi He

AU - Chen, Che Wei

AU - Li, Jyun Han

AU - Lin, Yu Hsien

AU - Lee, Yao Jen

AU - Luo, Guang Li

AU - Chien, Chao-Hsin

PY - 2016/1/1

Y1 - 2016/1/1

N2 - We present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (ΦBn) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 105 at the applied voltage of |Va|=1 V. Our quantum-well pMOSFET exhibited a high ION/IOFF ratio of ∼ 107(IS) and a moderate subthreshold swing of 166 mV/decade.

AB - We present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (ΦBn) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 105 at the applied voltage of |Va|=1 V. Our quantum-well pMOSFET exhibited a high ION/IOFF ratio of ∼ 107(IS) and a moderate subthreshold swing of 166 mV/decade.

KW - Microwave-activated annealing (MWA)

KW - NiSiGe

KW - PMOSFET

KW - Schottky barrier height

KW - quantum well (QW)

UR - http://www.scopus.com/inward/record.url?scp=84961566872&partnerID=8YFLogxK

U2 - 10.1109/LED.2015.2501841

DO - 10.1109/LED.2015.2501841

M3 - Article

AN - SCOPUS:84961566872

SN - 0741-3106

VL - 37

SP - 8

EP - 11

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

M1 - 7331593

ER -

High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET with Low Thermal Budget Process

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