High-performance ridge-waveguide multi-stack (N = 2, 5 and 10) InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range

Gray Lin*, I. F. Chen, F. J. Lay, J. Y. Chi, D. A. Livshits, A. R. Kovsh, V. M. Ustinov

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We have investigated light-current and spectral characteristics of 2-, 5- and 10-stack InAs/InGaAs/GaAs quantum dot (QD) ridge-waveguide lasers grown by MBE. Ultra-low threshold current of 1.43 mA was achieved for 2-stack QD laser. Simultaneous lasing at ground- and excited-states was observed. This effect is accounted for the finite time of carriers capture to the ground-state in QDs. Multi-stack QD structures enables to maintain continuous-wave (CW) ground-state lasing up to the current density of 100 × Jth and to achieve the highest output power and efficiency ever recorded for any single-mode lasers of 1.3-μm-wavelength range.

原文English
頁(從 - 到)187-192
頁數6
期刊International Journal of Nanoscience
3
發行號1-2
DOIs
出版狀態Published - 1 2月 2004

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