High Performance Resistive Switching Characteristics of SiN Films with a Cu/Ta/SiN/Cu/SiN/TiN Multilayer Structure

D. Kumar; Tseung-Yuen Tseng

doi:10.1088/1757-899X/281/1/012028

High Performance Resistive Switching Characteristics of SiN Films with a Cu/Ta/SiN/Cu/SiN/TiN Multilayer Structure

D. Kumar, Tseung-Yuen Tseng^*

^*此作品的通信作者

電子研究所

研究成果: Conference article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The bipolar resistive switching properties of SiN based conductive bridge random access memory (CBRAM) device are investigated for non-volatile memory applications in a Cu/Ta/SiN/Cu/SiN/TiN multilayer structure. The device shows good switching characteristics with set voltages between 0.8 V and 1.3 V and reset voltages between -0.3 V and - 0.7 V with a variation of less than 0.1 V. The Cu/Ta/SiN/Cu/SiN/TiN multilayer CBRAM device exhibits excellent memory performance, such as long stable endurance cycles (> 4.5x10³) during the test without any degradation, good retention ability (>10⁴ s) at a temperature of 120 °C with more than 10² on/off resistance ratio.

原文	English
文章編號	012028
期刊	IOP Conference Series: Materials Science and Engineering
卷	281
發行號	1
DOIs	https://doi.org/10.1088/1757-899X/281/1/012028
出版狀態	Published - 21 12月 2017
事件	1st International Workshop on Materials Science and Mechanical Engineering, IWMSME 2017 - Kunming, Yunnan, China 持續時間: 27 10月 2017 → 29 10月 2017

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10.1088/1757-899X/281/1/012028

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title = "High Performance Resistive Switching Characteristics of SiN Films with a Cu/Ta/SiN/Cu/SiN/TiN Multilayer Structure",

abstract = "The bipolar resistive switching properties of SiN based conductive bridge random access memory (CBRAM) device are investigated for non-volatile memory applications in a Cu/Ta/SiN/Cu/SiN/TiN multilayer structure. The device shows good switching characteristics with set voltages between 0.8 V and 1.3 V and reset voltages between -0.3 V and - 0.7 V with a variation of less than 0.1 V. The Cu/Ta/SiN/Cu/SiN/TiN multilayer CBRAM device exhibits excellent memory performance, such as long stable endurance cycles (> 4.5x103) during the test without any degradation, good retention ability (>104 s) at a temperature of 120 °C with more than 102 on/off resistance ratio.",

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AU - Tseng, Tseung-Yuen

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N2 - The bipolar resistive switching properties of SiN based conductive bridge random access memory (CBRAM) device are investigated for non-volatile memory applications in a Cu/Ta/SiN/Cu/SiN/TiN multilayer structure. The device shows good switching characteristics with set voltages between 0.8 V and 1.3 V and reset voltages between -0.3 V and - 0.7 V with a variation of less than 0.1 V. The Cu/Ta/SiN/Cu/SiN/TiN multilayer CBRAM device exhibits excellent memory performance, such as long stable endurance cycles (> 4.5x103) during the test without any degradation, good retention ability (>104 s) at a temperature of 120 °C with more than 102 on/off resistance ratio.

AB - The bipolar resistive switching properties of SiN based conductive bridge random access memory (CBRAM) device are investigated for non-volatile memory applications in a Cu/Ta/SiN/Cu/SiN/TiN multilayer structure. The device shows good switching characteristics with set voltages between 0.8 V and 1.3 V and reset voltages between -0.3 V and - 0.7 V with a variation of less than 0.1 V. The Cu/Ta/SiN/Cu/SiN/TiN multilayer CBRAM device exhibits excellent memory performance, such as long stable endurance cycles (> 4.5x103) during the test without any degradation, good retention ability (>104 s) at a temperature of 120 °C with more than 102 on/off resistance ratio.

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JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

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High Performance Resistive Switching Characteristics of SiN Films with a Cu/Ta/SiN/Cu/SiN/TiN Multilayer Structure

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