The bipolar resistive switching properties of SiN based conductive bridge random access memory (CBRAM) device are investigated for non-volatile memory applications in a Cu/Ta/SiN/Cu/SiN/TiN multilayer structure. The device shows good switching characteristics with set voltages between 0.8 V and 1.3 V and reset voltages between -0.3 V and - 0.7 V with a variation of less than 0.1 V. The Cu/Ta/SiN/Cu/SiN/TiN multilayer CBRAM device exhibits excellent memory performance, such as long stable endurance cycles (> 4.5x103) during the test without any degradation, good retention ability (>104 s) at a temperature of 120 °C with more than 102 on/off resistance ratio.
|期刊||IOP Conference Series: Materials Science and Engineering|
|出版狀態||Published - 21 12月 2017|
|事件||1st International Workshop on Materials Science and Mechanical Engineering, IWMSME 2017 - Kunming, Yunnan, China|
持續時間: 27 10月 2017 → 29 10月 2017