High Performance Resistive Switching Characteristics of SiN Films with a Cu/Ta/SiN/Cu/SiN/TiN Multilayer Structure

D. Kumar, Tseung-Yuen Tseng*

*此作品的通信作者

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The bipolar resistive switching properties of SiN based conductive bridge random access memory (CBRAM) device are investigated for non-volatile memory applications in a Cu/Ta/SiN/Cu/SiN/TiN multilayer structure. The device shows good switching characteristics with set voltages between 0.8 V and 1.3 V and reset voltages between -0.3 V and - 0.7 V with a variation of less than 0.1 V. The Cu/Ta/SiN/Cu/SiN/TiN multilayer CBRAM device exhibits excellent memory performance, such as long stable endurance cycles (> 4.5x103) during the test without any degradation, good retention ability (>104 s) at a temperature of 120 °C with more than 102 on/off resistance ratio.

原文English
文章編號012028
期刊IOP Conference Series: Materials Science and Engineering
281
發行號1
DOIs
出版狀態Published - 21 12月 2017
事件1st International Workshop on Materials Science and Mechanical Engineering, IWMSME 2017 - Kunming, Yunnan, China
持續時間: 27 10月 201729 10月 2017

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