A high-performance pseudomorphic high electron mobility transistor (HEMT) with high output power density and high power-added efficiency for low-voltage wireless communication applications has been developed. This paper describes the dc and microwave performance of the pseudomorphic AlGaAs/InGaAs HEMT developed. The 1 um gate-length HEMT exhibited a maximum drain current of 470 mA/mm at Vgs = +1.0 V. The maximum transconductance of the device was 280 mS/mm. At a drain bias of 3.0 V and a measurement frequency of 900 MHz, the 2 mm-wide HEMT demonstrated an output power of 26.1 dBm (a power density of 204 mW/mm) and a power-added efficiency of 65% under the class AB condition while an output power of 26.7 dBm (234 mW/mm) and a power-added efficiency of 60% were obtained under the class A condition. The developed pseudomorphic power HEMT developed achieves the highest output power density ever reported among the GaAs devices operating at 3.0 V.
|出版狀態||Published - 26 11月 1997|
|事件||Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia|
持續時間: 26 11月 1996 → 28 11月 1996
|Conference||Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE|
|期間||26/11/96 → 28/11/96|