High-performance pseudomorphic power HEMTs for low-voltage wireless communication applications

Yeong Lin Lai*, Edward Yi Chang, Chun Yen Chang, T. H. Liu, S. P. Wang

*此作品的通信作者

研究成果: Paper同行評審

1 引文 斯高帕斯(Scopus)

摘要

A high-performance pseudomorphic high electron mobility transistor (HEMT) with high output power density and high power-added efficiency for low-voltage wireless communication applications has been developed. This paper describes the dc and microwave performance of the pseudomorphic AlGaAs/InGaAs HEMT developed. The 1 um gate-length HEMT exhibited a maximum drain current of 470 mA/mm at Vgs = +1.0 V. The maximum transconductance of the device was 280 mS/mm. At a drain bias of 3.0 V and a measurement frequency of 900 MHz, the 2 mm-wide HEMT demonstrated an output power of 26.1 dBm (a power density of 204 mW/mm) and a power-added efficiency of 65% under the class AB condition while an output power of 26.7 dBm (234 mW/mm) and a power-added efficiency of 60% were obtained under the class A condition. The developed pseudomorphic power HEMT developed achieves the highest output power density ever reported among the GaAs devices operating at 3.0 V.

原文English
頁面225-228
頁數4
DOIs
出版狀態Published - 26 11月 1997
事件Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia
持續時間: 26 11月 199628 11月 1996

Conference

ConferenceProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
城市Penang, Malaysia
期間26/11/9628/11/96

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