摘要
In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as a resistance layer. The switching between high-and low-resistance states is triggered by the formation and dissociation of the charge transfer complex. As compared with the electrochemical-metallization-based ReRAM and the valence-change-based ReRAM, this DAXIN-PI ReRAM shows excellent performance, including large Ron/Roff ratio, superior endurance, low operation voltage, fast switching speed, needless of a forming process, and acceptable retention characteristics. Among them, large Ron/Roff ratio (> 105) and superior endurance (> 105 cycles) can be simultaneously achieved, and the detailed reliability test for PI-based ReRAMs has been analyzed for the first time.
原文 | English |
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文章編號 | 6365747 |
頁(從 - 到) | 123-125 |
頁數 | 3 |
期刊 | Ieee Electron Device Letters |
卷 | 34 |
發行號 | 1 |
DOIs | |
出版狀態 | Published - 2013 |