摘要
For the purpose of a reliable driving back-plane in AMOLED application, the Heat Retaining Enhanced Crystallization (HREC) technology is developed. A heat-retaining capping layer is applied in order to effectually slow down the heat dissipation and to retain the duration of melt, hence an enlarged poly-si grain lateral growth is obtained. With single-shot laser irradiation, a 7um-well location-controlled-n ploy Si active layer is obtained, exhibiting a high mobility (uFE=260cm2/Vsec) for the proposed dual-gate TFT device.
原文 | English |
---|---|
頁(從 - 到) | 246-249 |
頁數 | 4 |
期刊 | Digest of Technical Papers - SID International Symposium |
卷 | 37 |
發行號 | 1 |
DOIs | |
出版狀態 | Published - 2006 |
事件 | 44th International Symposium, Seminar, and Exhibition, SID 2006 - San Francisco, CA, 美國 持續時間: 4 6月 2006 → 9 6月 2006 |