For the purpose of a reliable driving back-plane in AMOLED application, the Heat Retaining Enhanced Crystallization (HREC) technology is developed. A heat-retaining capping layer is applied in order to effectually slow down the heat dissipation and to retain the duration of melt, hence an enlarged poly-si grain lateral growth is obtained. With single-shot laser irradiation, a 7um-well location-controlled-n ploy Si active layer is obtained, exhibiting a high mobility (uFE=260cm2/Vsec) for the proposed dual-gate TFT device.
|頁（從 - 到）||246-249|
|期刊||Digest of Technical Papers - SID International Symposium|
|出版狀態||Published - 1 1月 2006|
|事件||44th International Symposium, Seminar, and Exhibition, SID 2006 - San Francisco, CA, United States|
持續時間: 4 6月 2006 → 9 6月 2006