High performance polycrystalline silicon TFTs by heat-retaining enhanced crystallization for SOP and AMOLED applications

Hsing Hua Wu*, Po-Tsun Liu, Huang Sung Yu, Ting Chang Chang, Jia Xing Lin, Hung Tse Chen, Shun Fa Huang, Yu G. Chen, Chi Lin Chen

*此作品的通信作者

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

For the purpose of a reliable driving back-plane in AMOLED application, the Heat Retaining Enhanced Crystallization (HREC) technology is developed. A heat-retaining capping layer is applied in order to effectually slow down the heat dissipation and to retain the duration of melt, hence an enlarged poly-si grain lateral growth is obtained. With single-shot laser irradiation, a 7um-well location-controlled-n ploy Si active layer is obtained, exhibiting a high mobility (uFE=260cm2/Vsec) for the proposed dual-gate TFT device.

原文English
頁(從 - 到)246-249
頁數4
期刊Digest of Technical Papers - SID International Symposium
37
發行號1
DOIs
出版狀態Published - 2006
事件44th International Symposium, Seminar, and Exhibition, SID 2006 - San Francisco, CA, United States
持續時間: 4 6月 20069 6月 2006

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