TY - JOUR
T1 - High-performance polycrystalline-silicon TFT by heat-retaining enhanced lateral crystallization
AU - Liu, Po-Tsun
AU - Wu, Hsing Hua
PY - 2007/8
Y1 - 2007/8
N2 - High-performance low-temperature polycrystalline-silicon thin-film transistors (TFTs) have been fabricated by heat-retaining enhanced crystallization (H-REC). In the H-REC technology, a heat-retaining capping layer (HRL) is applied on the prepattern amorphous silicon islands to slow down the heat dissipation effectively. It thereby retains long duration of melting process and further enhances poly-Si-grain lateral growth. With a single shot of laser irradiation, the location-controllable poly-Si active layer with 7-μm length of grain size can be formed successfully. In addition, in this letter, the H-REC poly-Si TFT with dual gates is studied to enhanced electrical performance and stability.
AB - High-performance low-temperature polycrystalline-silicon thin-film transistors (TFTs) have been fabricated by heat-retaining enhanced crystallization (H-REC). In the H-REC technology, a heat-retaining capping layer (HRL) is applied on the prepattern amorphous silicon islands to slow down the heat dissipation effectively. It thereby retains long duration of melting process and further enhances poly-Si-grain lateral growth. With a single shot of laser irradiation, the location-controllable poly-Si active layer with 7-μm length of grain size can be formed successfully. In addition, in this letter, the H-REC poly-Si TFT with dual gates is studied to enhanced electrical performance and stability.
KW - Excimer laser crystallization (ELC)
KW - Heat-retaining enhanced crystallization (H-REC)
KW - Thin-film transistor (TFT)
UR - http://www.scopus.com/inward/record.url?scp=34547828971&partnerID=8YFLogxK
U2 - 10.1109/LED.2007.900856
DO - 10.1109/LED.2007.900856
M3 - Article
AN - SCOPUS:34547828971
SN - 0741-3106
VL - 28
SP - 722
EP - 724
JO - Ieee Electron Device Letters
JF - Ieee Electron Device Letters
IS - 8
ER -