High-performance poly-si thin-film transistors with L-fin channels

For the first time, we construct poly-Si thin-film transistors (TFTs) with novel L-shaped poly-Si fin channels (poly-Si TFTs with L-fin channels, called LFin-TFTs). The L-fin channels of LFin-TFTs are similar to the multiple-gated fin channels of FinFETs. The LFin-TFTs exhibit a low supply gate voltage (3 V), a good subthreshold swing (SS) ∼190 mV/dec, and a high on/off current ratio (I _ON /I _OFF ) < 10 ⁶ (V _D = 1 V) without hydrogen-related plasma treatments. After Ni salicidation, the devices exhibit steep SS ∼ 148 mV/dec and I _ON /I _OFF ∼ 10 ⁷ . After NH ₃ plasma treatment, the characteristics of the devices are further improved. The LFin-TFTs have steeper SS ∼ 132 mV/dec, higher I _ON / _IOFF > 10 ⁷ , and threshold voltage (V _TH ) ∼ 0.036 V.