High-performance poly-Si TFTs of top-gate with high-κ metal-gate combine the laser annealed channel and glass substrate

Yi Hsien Lu*, Chao-Hsin Chien, Po Yi Kuo, Ming Jui Yang, Hsiao Yi Lin, Tien-Sheng Chao

*此作品的通信作者

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摘要

We demonstrate high-performance low-temperature poly-Si thin film transistors (LTPS-TFTs) with a TaN/Hf -based top-gate-stack and combine the channel film by laser annealing and glass substrate (glass substrate high- κ metal-gate thin film transistor, called GSHM-TFTs). The GSHM-TFTs of n-channel (called GSHM-NTFTs) exhibit a very low threshold voltage, low supply voltage (∼2 V), steep subthreshold swing (S.S.) ∼95 mV/dec, and high I ON / I OFF ratio > 107. In contrast, GSHM-TFTs of p-channel (called GSHM-PTFTs) exhibit an S.S. ∼154 mV/dec and an I ON / I OFF ratio even higher than 108. Furthermore, the driving currents are also enhanced in GSHM-TFTs. These significant improvements are due to the combination of laser annealed channel film and the very high gate-capacitance density provided by Hf O 2 gate dielectrics with the effective oxide thickness of 14 nm.

原文English
期刊Electrochemical and Solid-State Letters
14
發行號1
DOIs
出版狀態Published - 24 一月 2011

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