High-performance poly-Si TFT with ultra-thin channel film and gate oxide for low-power application

Engineering & Materials Science

• Thin film transistors 100%
• Polysilicon 90%
• Oxides 67%
• Three dimensional integrated circuits 36%
• Film thickness 28%
• Leakage currents 28%

Physics & Astronomy

• thin bodies 57%
• oxides 48%
• transistors 46%
• performance 34%
• thin films 30%
• saturation 27%
• integrated circuits 18%
• leakage 16%
• film thickness 16%
• retarding 14%
• grain size 14%

Chemical Compounds

• Oxide 42%
• Liquid Film 37%
• Leakage Current 34%
• Application 24%
• Grain Size 24%