High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications

Yao Jen Lee, Ta Chun Cho, Po Jung Sung, Kuo Hsing Kao, Fu Kuo Hsueh, Fu Ju Hou, Po Cheng Chen, Hsiu Chih Chen, Chien Ting Wu, Shu Han Hsu, Yi Ju Chen, Yao Ming Huang, Yun Fang Hou, Wen Hsien Huang, Chih Chao Yang, Bo Yuan Chen, Kun Lin Lin, Min Cheng Chen, Chang Hong Shen, Guo Wei HuangKun Ping Huang, Michael I. Current, Yi-ming Li, Seiji Samukawa, Wen Fa Wu, Jia Min Shieh, Tien Sheng Chao, Wen Kuan Yeh

研究成果: Conference contribution同行評審

25 引文 斯高帕斯(Scopus)

摘要

A junctionless (JL) fin thin film transistor (FinTFT) with a novel shell doping profile (SDP) formed by a damage-free conformal molecular monolayer doping (MLD) method and a combination of microwave annealing (MWA) and CO2 laser spike annealing (COLSA) is demonstrated and studied. MWA drives in and partially activates the MLD dopants; the resultant SDP features an ultra-shallow depth (< 5nm) and an abrupt steepness (< 0.8 nm/dec). The dopant activation of the devices experienced MLD and MWA is further enhanced by the nonmelting COLSA without dopant diffusion, and which can also avoid fin deformation and recover surface defects left by fin patterning. Thanks to the enhanced dopant activation by COLSA, the SDP-FinTFTs overall exhibit better performance than the SDP-FinTFTs without COLSA and the conventional implanted (imp) FinTFTs in terms of subthreshold swing (S.S.), on-currents (Ion by 160% compared to the SDP-FinTFTs without COLSA) and on/off current ratio (Ion/Ioff107) for 3D stacked ICs applications. Our results reveal the potential of the proposed SDP formed by MLD, MWA and COLSA enabling a JLFinTFT showing excellent performance.

原文English
主出版物標題2015 IEEE International Electron Devices Meeting, IEDM 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面6.2.1-6.2.4
ISBN(電子)9781467398930
DOIs
出版狀態Published - 16 2月 2015
事件61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
持續時間: 7 12月 20159 12月 2015

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2016-February
ISSN(列印)0163-1918

Conference

Conference61st IEEE International Electron Devices Meeting, IEDM 2015
國家/地區United States
城市Washington
期間7/12/159/12/15

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