@inproceedings{ed4ac864c61c4d3f93e0c94e89de26c9,
title = "High-performance Ni/SiO 2 /Si programmable metallization cell",
abstract = " Resistive switching in Ni/SiO 2 /Si programmable metallization cells was investigated. The proposed switching mechanism is the formation and dissolution of Ni filaments. Under positive bias, Ni cations migrate through SiO 2 and are reduced at the cathode forming filaments. The filaments are dissolved by Joule-heating effect under positive or negative voltages. Promising resistive-switching characteristics, such as a large resistance ratio of ∼400, excellent data retention, and good immunity to read disturbance, are also revealed.",
keywords = "Joule-heating effect, Ni filament, programmable metallization cell, resistive switching, SiO2",
author = "Lin, {Kuan Liang} and Tseng, {Yi Ming} and Lin, {Jun Hung} and Jiann Shieh and Lee, {Yao Jen} and Tuo-Hung Hou and Lei, {Tan Fu}",
year = "2011",
month = sep,
day = "26",
doi = "10.1109/INEC.2011.5991718",
language = "English",
isbn = "9781457703799",
series = "Proceedings - International NanoElectronics Conference, INEC",
booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",
note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",
}