High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec(-1) swing

Chien Liu, Hsuan-Han Chen, Yi-Chun Tung, Wei-Chun Wang, Zhong-Ying Huang, Bing-Yang Shih, Szu-Yen Hsiung, Shih-An Wang, Yu-Chi Fan, Tsung-Ming Lee, Chien-Liang Lin, Zi-You Huang, Hsiu-Ming Liu, Sheng Lee, Wu-Ching Chou, Chun-Hu Cheng, Hsiao-Hsuan Hsu*

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

In this work, we demonstrated that the 5-nm-thick HfAlOx negative capacitance transistor (NCFET) with optimized Al doping can achieve a minimum 33 mV dec(-1) subthreshold swing (SS), an ultralow l(off) of 7.44 fA mu m(-1), and a high l(on)//l(off) ratio of 1.9 x 10(8). The NC switching with sub-60 mV dec(-1) SS can be implemented from V-DS - 0.2 V to 0.8 V due to an ultralow off-state leakage current. The experimental results reveal that well-controlled Al doping in HfAlOx not only reduces off-state leakage of the transistor, but also improves the ferroelectric NC effect to achieve a sub-60 mV dec-1 switching under a favorably low sub-1 voltage. This scaled HfAlOx NCFET with optimized Al doping and fluorine defect passivation shows the great potential for the application of low power logic devices. (C) 2020 The Japan Society of Applied Physics

原文English
文章編號01
頁數4
期刊Japanese Journal of Applied Physics, Part 2: Letters
59
DOIs
出版狀態Published - 1 4月 2020
事件International Conference on Solid State Devices and Materials (SSDM) - Nagoya, Japan
持續時間: 2 9月 20195 9月 2019

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