In this paper, we exploit a novel technique for preparing high density HfO2 nanocrystals with an average size < 10nm using spinodal phase separation of Hf-silicate thin film by 900°C rapid thermal annealing for nonvolatile memories. The density can be as high as 0.9-1.9times;10 12cm-2. Owing to the fact that HfO2 nanocrystals are well embedded inside SiO2 matrix and their sufficiently deep energy level, we, for the first time, have demonstrated superior characteristics of the nanocrystal memory in terms of considerably large memory window, high speed program/erase (1μs/0.1ms), long retention time greater than 108s for 10% charge loss, excellent endurance after 106 P/E cycles, negligible read/write disturbances and multi-bit operation.
|頁（從 - 到）||1080-1082|
|期刊||Technical Digest - International Electron Devices Meeting, IEDM|
|出版狀態||Published - 1 12月 2004|
|事件||IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States|
持續時間: 13 12月 2004 → 15 12月 2004