High-performance monolayer MoS₂ nanosheet GAA transistor

In this article, a 0.7 nm thick monolayer MoS₂ nanosheet gate-all-around field effect transistors (NS-GAAFETs) with conformal high-κ metal gate deposition are demonstrated. The device with 40 nm channel length exhibits a high on-state current density of ~410 μA μm⁻¹ with a large on/off ratio of 6 × 10⁸ at drain voltage = 1 V. The extracted contact resistance is 0.48 ± 0.1 kΩ μm in monolayer MoS₂ NS-GAAFETs, thereby showing the channel-dominated performance with the channel length scaling from 80 to 40 nm. The successful demonstration of device performance in this work verifies the integration potential of transition metal dichalcogenides for future logic transistor applications.