High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO 2 gate stack structure

Ming wen Ma, Tien-Sheng Chao*, Chun Jung Su, Woei Cherng Wu, Kuo Hsing Kao, Tan Fu Lei

*此作品的通信作者

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral-crystallization (MILC) channel layer and TaN/HO 2 gate stack is demonstrated for the first time. The devices of low threshold voltage V TH ∼0.095 V, excellent subthreshold swing S.S. ∼83 mV/dec., and high field-effect mobility μ FE ∼240 cm 2 /V ·s are achieved without any defect passivation methods. These significant improvements are due to the MILC channel film and the very high gate-capacitance density provided by HfO 2 gate dielectric with the effective oxide thickness of 5.12 nm.

原文English
頁(從 - 到)592-594
頁數3
期刊IEEE Electron Device Letters
29
發行號6
DOIs
出版狀態Published - 1 6月 2008

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