High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO ₂ gate stack structure

In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral-crystallization (MILC) channel layer and TaN/HO ₂ gate stack is demonstrated for the first time. The devices of low threshold voltage V _TH ∼0.095 V, excellent subthreshold swing S.S. ∼83 mV/dec., and high field-effect mobility μ _FE ∼240 cm ² /V ·s are achieved without any defect passivation methods. These significant improvements are due to the MILC channel film and the very high gate-capacitance density provided by HfO ₂ gate dielectric with the effective oxide thickness of 5.12 nm.