High-performance metal-induced lateral-crystallization polysilicon thin-film transistors with multiple nanowire channels and multiple gates

Yung Chun Wu, Ting Chang Chang, Po-Tsun Liu, Cheng Wei Chou, Yuan Chun Wu, Chun Hao Tu, Chun Yen Chang

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

In this study, pattern-dependent nickel (Ni) metal-induced lateral-crystallization (Ni-MILC) polysilicon thin-film transistors (poly-Si TFTs) with ten nanowire channels and multigate structure were fabricated and characterized. Experimental results reveal that applying ten nanowire channels improves the performance of an Ni-MILC poly-Si TFT, which thus has a higher ON current, a lower leakage current, and a lower threshold voltage (V th) than single-channel TFTs. Furthermore, the experimental results reveal that combining the multigate structure and ten nanowire channels further enhances the entire performance of Ni-MILC TFTs, which thus have a low leakage current, a high ON/OFF ratio, a low V th,& steep subthreshold swing, and kink-free output characteristics. The multigate structure with ten-nanowire-channel Ni-MILC TFTs has a few poly-Si grain boundary defects, a low lateral electrical field, and a gate-channel shortening effect, all of which are associated with such high-performance characteristics.

原文English
頁(從 - 到)157-162
頁數6
期刊IEEE Transactions on Nanotechnology
5
發行號3
DOIs
出版狀態Published - 1 5月 2006

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