High performance metal-gate/high-κ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technology

Albert Chin*, H. L. Kao, D. S. Yu, C. C. Liao, C. Zhu, M. F. Li, Shiyang Zhu, Dim Lee Kwong

*此作品的通信作者

    研究成果: Paper同行評審

    1 引文 斯高帕斯(Scopus)

    摘要

    We propose and demonstrate a new VLSI structure using high performance metal-gate/high-κ MOSFETs and high-Q RF passive devices on Ge-on- Insulator (GOI) platform. In additional to high RF performance passive devices on insulating Si formed by ion implantation, the metal-gate/(La)AlO 3/GOI MOSFETs have 1.7-2.0X improved electron and hole mobility with the merits of minimizing interfacial reaction, high-κ crystallization, Fermi-level pinning, and impurity diffusion due to low thermal budget of 500°C RTA.

    原文English
    頁面302-305
    頁數4
    出版狀態Published - 2004
    事件2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
    持續時間: 18 10月 200421 10月 2004

    Conference

    Conference2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
    國家/地區China
    城市Beijing
    期間18/10/0421/10/04

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