@inproceedings{a1924af5febc4b8ba746b7bdcfbc2a03,
title = "High-performance metal-ferroeletric-semiconductor nanosheet line tunneling field effect transistors with strained sige",
abstract = "Nanosheet line tunnel-field effect transistors (NLTFETs) are for the first time proposed by utilizing the advantages of ferroelectricity through HZO materials. Three ferroelectric line TFETs have been proposed and investigated. Among these, the metal-ferroelectric-semiconductor (MFS) structure has shown superior performance than the other two variants. The factors of electric field and electron barrier tunneling have been addressed to govern the performance of these structures. In addition, the effects of the ferroelectric (Hf0.5 Zr0.5 O2) thickness (tFE) and the dielectric constant have been discussed. The MFS NLTFETs can effectively utilize the advantages of ferroelectric than the other variants. High on-current of 175.6 μAμm and low off-current of 38.4 aA/ μm are achieved at tFE of 4 nm through proper utilization of gate-overlap on to the drain side. Furthermore, the proposed MFS structure successfully delivers low average and minimum subthreshold swings even at very thin tFE.",
keywords = "And SiGe., Hf0.5Zr0.5O2, MFS, Nanosheet line TFETs",
author = "Narasimhulu Thoti and Yiming Li and Kola, {Sekhar Reddy} and Seiji Samukawa",
note = "Publisher Copyright: {\textcopyright} 2020 The Japan Society of Applied Physics.; 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 ; Conference date: 03-09-2020 Through 06-10-2020",
year = "2020",
month = sep,
day = "23",
doi = "10.23919/SISPAD49475.2020.9241591",
language = "English",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "375--378",
booktitle = "2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020",
address = "United States",
}