High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer

An Jye Tzou, Da Wei Lin, Chien Rong Yu, Zhen Yu Li, Yu Kuang Liao, Bing Cheng Lin, Jhih Kai Huang, Chien-Chung Lin, Tsung-Sheng Kao, Hao-Chung Kuo, Chun Yen Chang

研究成果: Article同行評審

25 引文 斯高帕斯(Scopus)

摘要

In this study, high-performance InGaN-based green light-emitting diodes (LEDs) with a quaternary InAlGaN/GaN superlattice electron blocking layer (QSL-EBL) have been demonstrated. The band structural simulation was employed to investigate the electrostatic field and carriers distribution, show that the efficiency and droop behavior can be intensively improved by using a QSL-EBL in LEDs. The QSL-EBL structure can reduce the polarization-related electrostatic fields in the multiple quantum wells (MQWs), leading to a smoother band diagram and a more uniform carriers distribution among the quantum wells under forward bias. In comparison with green LEDs with conventional bulk-EBL structure, the light output power of LEDs with QSL-EBL was greatly enhanced by 53%. The efficiency droop shows only 30% at 100 A/cm2 comparing to its peak value, suggesting that the QSL-EBL LED is promising for future white lighting with high performance.

原文English
頁(從 - 到)11387-11395
頁數9
期刊Optics Express
24
發行號11
DOIs
出版狀態Published - 30 5月 2016

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