@inproceedings{c344e1c29219445daa422fc8ae884105,
title = "High performance InAs-Channel HEMT for low voltage milimeter wave applications",
abstract = "An 80-nm InP HEMT with InAs channel and InGaAs sub-channels has been fabricated. The high current gain cutoff frequency (ft) of 350 GHz and maximum oscillation frequency (fmax) of 360 GHz were obtained at VDS = 0.7 V due to the high electron mobility in the InAs channel. DC and RF characterizations on the device have been performed and the onsate breakdown voltage of the device was measured to be 1.75V. A 2-stage MMIC gain block was designed using such device. A simulated gain of better than 12 dB from 54 GHz to 71 GHz with only 14mW DC power consumption was achieved. Such high performance HEMTs demonstrated in this study shows great potential for very low power millimeter wave applications. Keywords-InP HEMT; InGaAs; gain block; MMIC.",
author = "Heng-Tung Hsu and Chang, {Chia Yuan} and Chang, {Edward Yi} and Kuo, {Chien I.} and Yasuyuki Miyamoto",
year = "2007",
month = dec,
day = "1",
doi = "10.1109/APMC.2007.4554851",
language = "English",
isbn = "1424407494",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
booktitle = "2007 Asia-Pacific Microwave Conference, APMC",
note = "Asia-Pacific Microwave Conference, APMC 2007 ; Conference date: 11-12-2007 Through 14-12-2007",
}