High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications

Chi Wen Chen*, Ting Chang Chang, Po-Tsun Liu, Hau Yan Lu, Kao Cheng Wang, Chen Shuo Huang, Chia Chun Ling, Tseung-Yuen Tseng

*此作品的通信作者

研究成果: Article同行評審

51 引文 斯高帕斯(Scopus)

摘要

A novel technology for manufacturing high-performance hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) is developed in this letter. In the bottom gate light-shield a-Si:H TFT structure, the side edge of a-Si:H island is capped with extra deposition of heavily phosphorous-doped a-Si layer. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts of source/ drain metal and the sidewall of a-Si:H island edge. In addition, electrical performance of the novel a-Si:H TFT device exhibits superior effective carrier mobility as high as 1.05 cm 2 /Vs, due to the enormous improvement in parasitic resistance. The impressively high performance of the proposed a-Si:H TFT provides the potential to apply foractive matrix liquid crystal display and active matrix organic light-emitting diode technology,

原文English
頁(從 - 到)731-733
頁數3
期刊IEEE Electron Device Letters
26
發行號10
DOIs
出版狀態Published - 1 10月 2005

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