High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications

Chi Wen Chen; Ting Chang Chang; Po-Tsun Liu; Hau Yan Lu; Kao Cheng Wang; Chen Shuo Huang; Chia Chun Ling; Tseung-Yuen Tseng

doi:10.1109/LED.2005.855405

High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications

Chi Wen Chen^*, Ting Chang Chang, Po-Tsun Liu, Hau Yan Lu, Kao Cheng Wang, Chen Shuo Huang, Chia Chun Ling, Tseung-Yuen Tseng

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光電工程學系

研究成果: Article › 同行評審

50 引文斯高帕斯（Scopus）

摘要

A novel technology for manufacturing high-performance hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) is developed in this letter. In the bottom gate light-shield a-Si:H TFT structure, the side edge of a-Si:H island is capped with extra deposition of heavily phosphorous-doped a-Si layer. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts of source/ drain metal and the sidewall of a-Si:H island edge. In addition, electrical performance of the novel a-Si:H TFT device exhibits superior effective carrier mobility as high as 1.05 cm ² /Vs, due to the enormous improvement in parasitic resistance. The impressively high performance of the proposed a-Si:H TFT provides the potential to apply foractive matrix liquid crystal display and active matrix organic light-emitting diode technology,

原文	English
頁（從 - 到）	731-733
頁數	3
期刊	IEEE Electron Device Letters
卷	26
發行號	10
DOIs	https://doi.org/10.1109/LED.2005.855405
出版狀態	Published - 1 10月 2005

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title = "High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications",

abstract = " A novel technology for manufacturing high-performance hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) is developed in this letter. In the bottom gate light-shield a-Si:H TFT structure, the side edge of a-Si:H island is capped with extra deposition of heavily phosphorous-doped a-Si layer. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts of source/ drain metal and the sidewall of a-Si:H island edge. In addition, electrical performance of the novel a-Si:H TFT device exhibits superior effective carrier mobility as high as 1.05 cm 2 /Vs, due to the enormous improvement in parasitic resistance. The impressively high performance of the proposed a-Si:H TFT provides the potential to apply foractive matrix liquid crystal display and active matrix organic light-emitting diode technology,",

keywords = "Hydrogenated amorphous silicon (a-Si:H), Light-shield, Parasitic resistance, Thin-film transistor (TFT)",

author = "Chen, {Chi Wen} and Chang, {Ting Chang} and Po-Tsun Liu and Lu, {Hau Yan} and Wang, {Kao Cheng} and Huang, {Chen Shuo} and Ling, {Chia Chun} and Tseung-Yuen Tseng",

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doi = "10.1109/LED.2005.855405",

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T1 - High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications

AU - Chen, Chi Wen

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Lu, Hau Yan

AU - Wang, Kao Cheng

AU - Huang, Chen Shuo

AU - Ling, Chia Chun

AU - Tseng, Tseung-Yuen

PY - 2005/10/1

Y1 - 2005/10/1

N2 - A novel technology for manufacturing high-performance hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) is developed in this letter. In the bottom gate light-shield a-Si:H TFT structure, the side edge of a-Si:H island is capped with extra deposition of heavily phosphorous-doped a-Si layer. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts of source/ drain metal and the sidewall of a-Si:H island edge. In addition, electrical performance of the novel a-Si:H TFT device exhibits superior effective carrier mobility as high as 1.05 cm 2 /Vs, due to the enormous improvement in parasitic resistance. The impressively high performance of the proposed a-Si:H TFT provides the potential to apply foractive matrix liquid crystal display and active matrix organic light-emitting diode technology,

AB - A novel technology for manufacturing high-performance hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) is developed in this letter. In the bottom gate light-shield a-Si:H TFT structure, the side edge of a-Si:H island is capped with extra deposition of heavily phosphorous-doped a-Si layer. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts of source/ drain metal and the sidewall of a-Si:H island edge. In addition, electrical performance of the novel a-Si:H TFT device exhibits superior effective carrier mobility as high as 1.05 cm 2 /Vs, due to the enormous improvement in parasitic resistance. The impressively high performance of the proposed a-Si:H TFT provides the potential to apply foractive matrix liquid crystal display and active matrix organic light-emitting diode technology,

KW - Hydrogenated amorphous silicon (a-Si:H)

KW - Light-shield

KW - Parasitic resistance

KW - Thin-film transistor (TFT)

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DO - 10.1109/LED.2005.855405

M3 - Article

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VL - 26

SP - 731

EP - 733

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications

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