High-performance HfO2/ZrO2/IGZO thin-film transistors deposited using atmospheric pressure plasma jet

Chien Hung Wu; Kow-Ming Chang; Hsin Yu Hsu

doi:10.1049/el.2014.1823

High-performance HfO₂/ZrO₂/IGZO thin-film transistors deposited using atmospheric pressure plasma jet

Chien Hung Wu, Kow-Ming Chang, Hsin Yu Hsu

電子研究所

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

An atmospheric pressure plasma jet (APPJ) deposition technology that is employed for the preparation of transparent oxide semiconductors film using an eco-friendly water-based metal salt solution as a precursor is presented. Through the use of APPJ indium-gallium-zinc-oxide (IGZO) film as the channel material and a high-k dielectric HfO₂/ZrO₂ gate stack, IGZO-based transparent thin-film transistors (TFTs) were fabricated and characterised. The HfO₂/ZrO₂/IGZO-TFTs by APPJ demonstrated excellent electrical characteristics, including a low V_th of 0.63 V, a small subthreshold swing of 0.37 V/dec, a high mobility of 40 cm²/V-s and a large I_on/I_off ratio of 7 × 10⁸.

原文	English
頁（從 - 到）	1747-1749
頁數	3
期刊	Electronics Letters
卷	50
發行號	23
DOIs	https://doi.org/10.1049/el.2014.1823
出版狀態	Published - 6 11月 2014

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10.1049/el.2014.1823

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title = "High-performance HfO2/ZrO2/IGZO thin-film transistors deposited using atmospheric pressure plasma jet",

abstract = "An atmospheric pressure plasma jet (APPJ) deposition technology that is employed for the preparation of transparent oxide semiconductors film using an eco-friendly water-based metal salt solution as a precursor is presented. Through the use of APPJ indium-gallium-zinc-oxide (IGZO) film as the channel material and a high-k dielectric HfO2/ZrO2 gate stack, IGZO-based transparent thin-film transistors (TFTs) were fabricated and characterised. The HfO2/ZrO2/IGZO-TFTs by APPJ demonstrated excellent electrical characteristics, including a low Vth of 0.63 V, a small subthreshold swing of 0.37 V/dec, a high mobility of 40 cm2/V-s and a large Ion/Ioff ratio of 7 × 108.",

author = "Wu, {Chien Hung} and Kow-Ming Chang and Hsu, {Hsin Yu}",

note = "Publisher Copyright: {\textcopyright} The Institution of Engineering and Technology 2014.",

year = "2014",

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N2 - An atmospheric pressure plasma jet (APPJ) deposition technology that is employed for the preparation of transparent oxide semiconductors film using an eco-friendly water-based metal salt solution as a precursor is presented. Through the use of APPJ indium-gallium-zinc-oxide (IGZO) film as the channel material and a high-k dielectric HfO2/ZrO2 gate stack, IGZO-based transparent thin-film transistors (TFTs) were fabricated and characterised. The HfO2/ZrO2/IGZO-TFTs by APPJ demonstrated excellent electrical characteristics, including a low Vth of 0.63 V, a small subthreshold swing of 0.37 V/dec, a high mobility of 40 cm2/V-s and a large Ion/Ioff ratio of 7 × 108.

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High-performance HfO2/ZrO2/IGZO thin-film transistors deposited using atmospheric pressure plasma jet

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High-performance HfO₂/ZrO₂/IGZO thin-film transistors deposited using atmospheric pressure plasma jet