High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/ m at VOV=1V,S.S.=64 mV/dec,ION/IOFF=2.5 106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation

Cheng Yu Wu, Dun Bao Ruan, Kuei Shu Chang-Liao*, Yao Jen Lee, Yu Chuan Chiu, Chih Wei Liu, Guan Ting Liu, Bo Lien Kuo, Kai Chun Yang, Cheng Han Li, Po Tsun Liu

*此作品的通信作者

研究成果: Conference contribution同行評審

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Engineering & Materials Science

Chemical Compounds