High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/ m at VOV=1V,S.S.=64 mV/dec,ION/IOFF=2.5 106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation

Cheng Yu Wu, Dun Bao Ruan, Kuei Shu Chang-Liao*, Yao Jen Lee, Yu Chuan Chiu, Chih Wei Liu, Guan Ting Liu, Bo Lien Kuo, Kai Chun Yang, Cheng Han Li, Po Tsun Liu

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

A high performance Ge FinFET CMOS invertor with ION=2mA/ m at VOV =1V,S.S.=64mV/dec,ION/IOFF=2.5 106 , and voltage gain=90 V/V is achieved by a high pressure supercritical fluid hydroxide oxidation, due to the reduced unstable oxidation states and oxygen vacancy.

原文English
主出版物標題2023 Silicon Nanoelectronics Workshop, SNW 2023
發行者Institute of Electrical and Electronics Engineers Inc.
頁面23-24
頁數2
ISBN(電子)9784863488083
DOIs
出版狀態Published - 2023
事件26th Silicon Nanoelectronics Workshop, SNW 2023 - Kyoto, Japan
持續時間: 11 6月 202312 6月 2023

出版系列

名字2023 Silicon Nanoelectronics Workshop, SNW 2023

Conference

Conference26th Silicon Nanoelectronics Workshop, SNW 2023
國家/地區Japan
城市Kyoto
期間11/06/2312/06/23

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