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High performance GaN-based flip-chip LEDs with different electrode patterns
Ray-Hua Horng
, Shih Hao Chuang, Ching Ho Tien, Sin Cyuan Lin, Dong Sing Wuu
電子研究所
研究成果
:
Article
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同行評審
28
引文 斯高帕斯(Scopus)
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Keyphrases
High Performance
100%
GaN-based
100%
Electrode Pattern
100%
Flip-chip LED (FCLED)
100%
Light Output
66%
Current Spreading
66%
Indium Gallium Nitride (InGaN)
33%
Design Methodology
33%
P-type
33%
Current-voltage Characteristics
33%
Injection Current
33%
Light Emission
33%
Active Regions
33%
Forward Voltage
33%
GaN-based LED
33%
High-reflective Mirror
33%
Thermal Performance
33%
Flip-chip Light-emitting Diode
33%
Characteristic Emission
33%
Simple Circuit
33%
Emission Pattern
33%
Performance Efficiency
33%
Metallic Films
33%
Power Droop
33%
NiAg
33%
Thermal Infrared Image
33%
Optoelectronic Measurement
33%
Engineering
Light Output Power
100%
Electrode Type
100%
Light-Emitting Diode
50%
Current-Voltage Characteristic
50%
Current Injection
50%
Thermal Performance
50%
Active Region
50%
Forward Voltage
50%
Efficiency Droop
50%
Optoelectronics
50%
Electrical Circuit
50%
Light Emission
50%
Reflectance
50%
Material Science
Electronic Circuit
100%
Light-Emitting Diode
100%
Current Voltage Characteristics
100%
Reflectivity
100%
Metallic Films
100%
Physics
Light Emitting Diode
100%
Light Emission
100%
Optoelectronics
100%
Reflectance
100%