High-performance GAA sidewall-damascened sub-10-nm in situ n+-doped poly-Si NWs channels junctionless FETs

研究成果: Article › 同行評審

26 引文 斯高帕斯（Scopus）

指紋

深入研究「High-performance GAA sidewall-damascened sub-10-nm in situ n+-doped poly-Si NWs channels junctionless FETs」主題。共同形成了獨特的指紋。

Keyphrases

Physics

Engineering

Chemical Engineering