TY - JOUR
T1 - High performance deep-submicron n-MOSFETs by nitrogen implantation and in-situ HF vapor clean
AU - Chen, Jiann Heng
AU - Lei, Tan Fu
AU - Chen, Chia Lin
AU - Chao, Tien-Sheng
AU - Wen, Wen Ying
AU - Chen, Kuag Ting
PY - 2000/1/1
Y1 - 2000/1/1
N2 - This study demonstrates a high performance and reliable deep-submicron n-MOSFETs with ultra-thin gate oxide prepared by combining with nitrogen gate electrode implantation and native-oxide-free in-situ HF vapor pre-oxidation cleaning. Our results indicate that the performance and reliability, including the leakage current of ultra-thin gate oxide, the drain current (Id), transconductance (Gm), charge pumping current (Icp), stress induce leakage current (SILC), and hot carrier reliability of n-MOSFETs with 4 nm thin gate oxides are all significantly improved.
AB - This study demonstrates a high performance and reliable deep-submicron n-MOSFETs with ultra-thin gate oxide prepared by combining with nitrogen gate electrode implantation and native-oxide-free in-situ HF vapor pre-oxidation cleaning. Our results indicate that the performance and reliability, including the leakage current of ultra-thin gate oxide, the drain current (Id), transconductance (Gm), charge pumping current (Icp), stress induce leakage current (SILC), and hot carrier reliability of n-MOSFETs with 4 nm thin gate oxides are all significantly improved.
UR - http://www.scopus.com/inward/record.url?scp=0033750005&partnerID=8YFLogxK
U2 - 10.1109/RELPHY.2000.843911
DO - 10.1109/RELPHY.2000.843911
M3 - Article
AN - SCOPUS:0033750005
SN - 0099-9512
SP - 180
EP - 185
JO - Annual Proceedings - Reliability Physics (Symposium)
JF - Annual Proceedings - Reliability Physics (Symposium)
ER -