High performance Cu-doped SiO2 ReRAM by a novel chemical soak method

Fun Tat Chin; Wen Luh Yang; Tien-Sheng Chao; Yuan Ming Chang; Li Min Lin; Sheng Hsien Liu; Chia Hsiung Lin

doi:10.1149/1.3633063

High performance Cu-doped SiO2 ReRAM by a novel chemical soak method

Fun Tat Chin^*, Wen Luh Yang, Tien-Sheng Chao, Yuan Ming Chang, Li Min Lin, Sheng Hsien Liu, Chia Hsiung Lin

^*此作品的通信作者

電子物理學系

研究成果: Conference contribution › 同行評審

1 引文斯高帕斯（Scopus）

摘要

In this paper, a novel chemical soak method is proposed to fabricate a Cu-doped SiO ₂ ReRAM device. This method can easily fabricate a lightly Cu-doped SiO ₂ film and effectively improve the reliability of the conventional Cu-doped SiO ₂ ReRAM device. A reproducible bipolar switching characteristic with set/reset voltage (ca. 2.5 V/ -0.7 V) is performed in this device and the electrical conduction in HRS and LRS are related to Poole-Frenkel and Ohmic conduction, respectively. Excellent performance in terms of high on/off ratio (∼10 ⁶), narrow range distribution of set and reset voltages, stable data retention, and up to 110 times switching cycles has been achieved by this novel chemical soak method for Cu-doped SiO ₂ ReRAM device.

原文	English
主出版物標題	Physics and Technology of High-k Materials 9
頁面	469-473
頁數	5
版本	3
DOIs	https://doi.org/10.1149/1.3633063
出版狀態	Published - 1 12月 2011
事件	9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States 持續時間: 10 10月 2011 → 12 10月 2011

出版系列

名字	ECS Transactions
號碼	3
卷	41
ISSN（列印）	1938-5862
ISSN（電子）	1938-6737

Conference

Conference	9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
國家/地區	United States
城市	Boston, MA
期間	10/10/11 → 12/10/11

存取文件

10.1149/1.3633063

其它文件與鏈接

Link to publication in Scopus

引用此

@inproceedings{e3cd9c119bf54e02a967e95f71a036d5,

title = "High performance Cu-doped SiO2 ReRAM by a novel chemical soak method",

abstract = "In this paper, a novel chemical soak method is proposed to fabricate a Cu-doped SiO 2 ReRAM device. This method can easily fabricate a lightly Cu-doped SiO 2 film and effectively improve the reliability of the conventional Cu-doped SiO 2 ReRAM device. A reproducible bipolar switching characteristic with set/reset voltage (ca. 2.5 V/ -0.7 V) is performed in this device and the electrical conduction in HRS and LRS are related to Poole-Frenkel and Ohmic conduction, respectively. Excellent performance in terms of high on/off ratio (∼10 6), narrow range distribution of set and reset voltages, stable data retention, and up to 110 times switching cycles has been achieved by this novel chemical soak method for Cu-doped SiO 2 ReRAM device.",

author = "Chin, {Fun Tat} and Yang, {Wen Luh} and Tien-Sheng Chao and Chang, {Yuan Ming} and Lin, {Li Min} and Liu, {Sheng Hsien} and Lin, {Chia Hsiung}",

year = "2011",

month = dec,

day = "1",

doi = "10.1149/1.3633063",

language = "English",

isbn = "9781566779036",

series = "ECS Transactions",

number = "3",

pages = "469--473",

booktitle = "Physics and Technology of High-k Materials 9",

edition = "3",

note = "null ; Conference date: 10-10-2011 Through 12-10-2011",

}

Chin, FT, Yang, WL, Chao, T-S, Chang, YM, Lin, LM, Liu, SH & Lin, CH 2011, High performance Cu-doped SiO2 ReRAM by a novel chemical soak method. 於 Physics and Technology of High-k Materials 9. 3 edn, ECS Transactions, 編號 3, 卷 41, 頁 469-473, 9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting, Boston, MA, United States, 10/10/11. https://doi.org/10.1149/1.3633063

TY - GEN

T1 - High performance Cu-doped SiO2 ReRAM by a novel chemical soak method

AU - Chin, Fun Tat

AU - Yang, Wen Luh

AU - Chao, Tien-Sheng

AU - Chang, Yuan Ming

AU - Lin, Li Min

AU - Liu, Sheng Hsien

AU - Lin, Chia Hsiung

PY - 2011/12/1

Y1 - 2011/12/1

N2 - In this paper, a novel chemical soak method is proposed to fabricate a Cu-doped SiO 2 ReRAM device. This method can easily fabricate a lightly Cu-doped SiO 2 film and effectively improve the reliability of the conventional Cu-doped SiO 2 ReRAM device. A reproducible bipolar switching characteristic with set/reset voltage (ca. 2.5 V/ -0.7 V) is performed in this device and the electrical conduction in HRS and LRS are related to Poole-Frenkel and Ohmic conduction, respectively. Excellent performance in terms of high on/off ratio (∼10 6), narrow range distribution of set and reset voltages, stable data retention, and up to 110 times switching cycles has been achieved by this novel chemical soak method for Cu-doped SiO 2 ReRAM device.

AB - In this paper, a novel chemical soak method is proposed to fabricate a Cu-doped SiO 2 ReRAM device. This method can easily fabricate a lightly Cu-doped SiO 2 film and effectively improve the reliability of the conventional Cu-doped SiO 2 ReRAM device. A reproducible bipolar switching characteristic with set/reset voltage (ca. 2.5 V/ -0.7 V) is performed in this device and the electrical conduction in HRS and LRS are related to Poole-Frenkel and Ohmic conduction, respectively. Excellent performance in terms of high on/off ratio (∼10 6), narrow range distribution of set and reset voltages, stable data retention, and up to 110 times switching cycles has been achieved by this novel chemical soak method for Cu-doped SiO 2 ReRAM device.

UR - http://www.scopus.com/inward/record.url?scp=84863175772&partnerID=8YFLogxK

U2 - 10.1149/1.3633063

DO - 10.1149/1.3633063

M3 - Conference contribution

AN - SCOPUS:84863175772

SN - 9781566779036

T3 - ECS Transactions

SP - 469

EP - 473

BT - Physics and Technology of High-k Materials 9

Y2 - 10 October 2011 through 12 October 2011

ER -

High performance Cu-doped SiO2 ReRAM by a novel chemical soak method

摘要

出版系列

Conference

存取文件

其它文件與鏈接

指紋

引用此