@inproceedings{8b658a6a5d294e9e81ffd9bdd67cc7ad,
title = "High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications",
abstract = "Ge peaking n- and p-FinFETs have been demonstrated by adopting neutral beam etching (NBE) and anisotropic neutral beam oxidation (NBO) processes. The irradiation-free NB processes not only suppress surface roughness but also guarantee low defect generation on the etched Ge surface. The fabricated Ge peaking FinFETs possess several unique features: (1) A peaking fin configuration with a 6-nm top-gate formed by an anisotropic NBO process at room temperature. (2) Nearly defect-free three dimensional channel surfaces by NB processes. (3) Ion and Gm improvement by NB processes as compared to that by conventional inductively coupled plasma etching (ICP). (4) Recorded high Ion/Ioff ratio and low subthreshold swing (S.S. ∼ 70 mV/dec.) of Ge n-FinFETs. (5) Excellent immunity for short channel effect of Ge FinFETs.",
author = "Lee, {Y. J.} and Hong, {T. C.} and Hsueh, {F. K.} and Sung, {P. J.} and Chen, {C. Y.} and Chuang, {S. S.} and Cho, {T. C.} and S. Noda and Tsou, {Y. C.} and Kao, {K. H.} and Wu, {C. T.} and Yu, {T. Y.} and Jian, {Y. L.} and Su, {C. J.} and Huang, {Y. M.} and Huang, {W. H.} and Chen, {B. Y.} and Chen, {M. C.} and Huang, {K. P.} and Li, {J. Y.} and Chen, {M. J.} and Yi-Ming Li and S. Samukawa and Wu, {W. F.} and Huang, {G. W.} and Shieh, {J. M.} and Tseung-Yuen Tseng and Tien-Sheng Chao and Wang, {Y. H.} and Yeh, {W. K.}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",
year = "2017",
month = jan,
day = "31",
doi = "10.1109/IEDM.2016.7838535",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "33.5.1--33.5.4",
booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",
address = "United States",
}