High performance charge-trapping flash memory with highly-scaled trapping layer

Albert Chin; Chung-Yong Tsai; Hong Wang

doi:10.1109/NVMTS.2011.6137106

High performance charge-trapping flash memory with highly-scaled trapping layer

Albert Chin^*, Chung-Yong Tsai, Hong Wang

^*此作品的通信作者

電機工程學系

研究成果: Paper › 同行評審

1 引文斯高帕斯（Scopus）

摘要

We report a novel charge-trapping (CT) flash memory device with highly scaled equivalent-Si ₃N ₄-thickness (ENT) trapping layer <4 nm. This device shows a large 10-year extrapolated retention window of 3.1 V at 125°C and excellent endurance of 10 ⁶ cycles, under the fast 100 μs and low ±16 V program/erase. These excellent memory device performances and ultra-thin ENT trapping thickness are the enable technology to continuously downscale the flash memory.

原文	English
頁面	32-35
頁數	4
DOIs	https://doi.org/10.1109/NVMTS.2011.6137106
出版狀態	Published - 2011
事件	2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011 - Shanghai, China 持續時間: 7 11月 2011 → 9 11月 2011

Conference

Conference	2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011
國家/地區	China
城市	Shanghai
期間	7/11/11 → 9/11/11

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10.1109/NVMTS.2011.6137106

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Link to publication in Scopus

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@conference{b5e3f687954247848fe7c98a4c21ee0d,

title = "High performance charge-trapping flash memory with highly-scaled trapping layer",

abstract = "We report a novel charge-trapping (CT) flash memory device with highly scaled equivalent-Si 3N 4-thickness (ENT) trapping layer <4 nm. This device shows a large 10-year extrapolated retention window of 3.1 V at 125°C and excellent endurance of 10 6 cycles, under the fast 100 μs and low ±16 V program/erase. These excellent memory device performances and ultra-thin ENT trapping thickness are the enable technology to continuously downscale the flash memory.",

keywords = "CT flash, Charge-trapping flash, ENT, high-, non-volatile memory",

author = "Albert Chin and Chung-Yong Tsai and Hong Wang",

year = "2011",

doi = "10.1109/NVMTS.2011.6137106",

language = "English",

pages = "32--35",

note = "2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011 ; Conference date: 07-11-2011 Through 09-11-2011",

}

TY - CONF

T1 - High performance charge-trapping flash memory with highly-scaled trapping layer

AU - Chin, Albert

AU - Tsai, Chung-Yong

AU - Wang, Hong

PY - 2011

Y1 - 2011

N2 - We report a novel charge-trapping (CT) flash memory device with highly scaled equivalent-Si 3N 4-thickness (ENT) trapping layer <4 nm. This device shows a large 10-year extrapolated retention window of 3.1 V at 125°C and excellent endurance of 10 6 cycles, under the fast 100 μs and low ±16 V program/erase. These excellent memory device performances and ultra-thin ENT trapping thickness are the enable technology to continuously downscale the flash memory.

AB - We report a novel charge-trapping (CT) flash memory device with highly scaled equivalent-Si 3N 4-thickness (ENT) trapping layer <4 nm. This device shows a large 10-year extrapolated retention window of 3.1 V at 125°C and excellent endurance of 10 6 cycles, under the fast 100 μs and low ±16 V program/erase. These excellent memory device performances and ultra-thin ENT trapping thickness are the enable technology to continuously downscale the flash memory.

KW - CT flash

KW - Charge-trapping flash

KW - ENT

KW - high-

KW - non-volatile memory

UR - http://www.scopus.com/inward/record.url?scp=84857176080&partnerID=8YFLogxK

U2 - 10.1109/NVMTS.2011.6137106

DO - 10.1109/NVMTS.2011.6137106

M3 - Paper

AN - SCOPUS:84857176080

SP - 32

EP - 35

T2 - 2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011

Y2 - 7 November 2011 through 9 November 2011

ER -

High performance charge-trapping flash memory with highly-scaled trapping layer

摘要

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