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High performance and reliability of poly-Si thin-film transistors using nickel drive-in induced laterally crystallization
Yew-Chuhg Wu
, Chih Pang Chang
材料科學與工程學系
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Conference contribution
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Keyphrases
Annealing
25%
Crystallization
100%
Drive-in
100%
High Field-effect Mobility
25%
High Performance
100%
High Reliability
100%
Low Threshold Voltage
25%
Metal-induced Crystallization
25%
Ni Film
25%
Ni Metal
25%
Off-state Leakage Current
25%
On-state Current
25%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
100%
Si Layer
25%
Small Standard Deviation
25%
Subthreshold Slope
25%
Trap-state Density
25%
Material Science
Density
50%
Film
50%
Silicon
50%
Thin-Film Transistor
100%
Engineering
Polysilicon
100%
Subthreshold Slope
50%
Thin-Film Transistor
100%