High-performance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate delectric

Ming Jui Yang; Chao-Hsin Chien; Yi Hsien Lu; Guang Li Luo; Su Ching Chiu; Chun Che Lou; Tiao Yuan Huang

doi:10.1109/LED.2007.904901

High-performance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate delectric

Ming Jui Yang^*
, Chao-Hsin Chien
, Yi Hsien Lu
, Guang Li Luo
, Su Ching Chiu
, Chun Che Lou
, Tiao Yuan Huang

^*此作品的通信作者

研究成果: Article › 同行評審

18 引文斯高帕斯（Scopus）

摘要

In this letter, high-performance p-channel polycrystalline-silicon thin-film transistors (TFTs) using hafnium-silicate (HfSiO_x) gate dielectric are demonstrated with low-temperature processing. Because of the higher gate-capacitance density, TFTs with HfSiO_x gate dielectric exhibit excellent device performance in terms of higher I_ON/I_OFF current ratio, lower subthreshold swing, and lower threshold voltage (V_th albeit with slightly higher off-state current. More importantly, the mobility of TFTs with HfSiO_x gate dielectric is 1.7 times that of TFTs with conventional deposited-SiO₂ gate dielectric.

原文	English
頁（從 - 到）	902-904
頁數	3
期刊	IEEE Electron Device Letters
卷	28
發行號	10
DOIs	https://doi.org/10.1109/LED.2007.904901
出版狀態	Published - 10月 2007

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10.1109/LED.2007.904901

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@article{934452996ff94118b0842341e9187f02,

title = "High-performance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate delectric",

abstract = "In this letter, high-performance p-channel polycrystalline-silicon thin-film transistors (TFTs) using hafnium-silicate (HfSiOx) gate dielectric are demonstrated with low-temperature processing. Because of the higher gate-capacitance density, TFTs with HfSiOx gate dielectric exhibit excellent device performance in terms of higher ION/IOFF current ratio, lower subthreshold swing, and lower threshold voltage (Vth albeit with slightly higher off-state current. More importantly, the mobility of TFTs with HfSiOx gate dielectric is 1.7 times that of TFTs with conventional deposited-SiO2 gate dielectric.",

keywords = "Hafnium silicate (HfSiO), High dielectric constant (high-κ), Polycrystalline-silicon thin-film transistors (poly-Si TFTs)",

author = "Yang, \{Ming Jui\} and Chao-Hsin Chien and Lu, \{Yi Hsien\} and Luo, \{Guang Li\} and Chiu, \{Su Ching\} and Lou, \{Chun Che\} and Huang, \{Tiao Yuan\}",

year = "2007",

month = oct,

doi = "10.1109/LED.2007.904901",

language = "English",

volume = "28",

pages = "902--904",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - High-performance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate delectric

AU - Yang, Ming Jui

AU - Chien, Chao-Hsin

AU - Lu, Yi Hsien

AU - Luo, Guang Li

AU - Chiu, Su Ching

AU - Lou, Chun Che

AU - Huang, Tiao Yuan

PY - 2007/10

Y1 - 2007/10

N2 - In this letter, high-performance p-channel polycrystalline-silicon thin-film transistors (TFTs) using hafnium-silicate (HfSiOx) gate dielectric are demonstrated with low-temperature processing. Because of the higher gate-capacitance density, TFTs with HfSiOx gate dielectric exhibit excellent device performance in terms of higher ION/IOFF current ratio, lower subthreshold swing, and lower threshold voltage (Vth albeit with slightly higher off-state current. More importantly, the mobility of TFTs with HfSiOx gate dielectric is 1.7 times that of TFTs with conventional deposited-SiO2 gate dielectric.

AB - In this letter, high-performance p-channel polycrystalline-silicon thin-film transistors (TFTs) using hafnium-silicate (HfSiOx) gate dielectric are demonstrated with low-temperature processing. Because of the higher gate-capacitance density, TFTs with HfSiOx gate dielectric exhibit excellent device performance in terms of higher ION/IOFF current ratio, lower subthreshold swing, and lower threshold voltage (Vth albeit with slightly higher off-state current. More importantly, the mobility of TFTs with HfSiOx gate dielectric is 1.7 times that of TFTs with conventional deposited-SiO2 gate dielectric.

KW - Hafnium silicate (HfSiO)

KW - High dielectric constant (high-κ)

KW - Polycrystalline-silicon thin-film transistors (poly-Si TFTs)

UR - https://www.scopus.com/pages/publications/34948863321

U2 - 10.1109/LED.2007.904901

DO - 10.1109/LED.2007.904901

M3 - Article

AN - SCOPUS:34948863321

SN - 0741-3106

VL - 28

SP - 902

EP - 904

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

High-performance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate delectric

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