High-performance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate delectric

Ming Jui Yang*, Chao-Hsin Chien, Yi Hsien Lu, Guang Li Luo, Su Ching Chiu, Chun Che Lou, Tiao Yuan Huang

*此作品的通信作者

    研究成果: Article同行評審

    17 引文 斯高帕斯(Scopus)

    摘要

    In this letter, high-performance p-channel polycrystalline-silicon thin-film transistors (TFTs) using hafnium-silicate (HfSiOx) gate dielectric are demonstrated with low-temperature processing. Because of the higher gate-capacitance density, TFTs with HfSiOx gate dielectric exhibit excellent device performance in terms of higher ION/IOFF current ratio, lower subthreshold swing, and lower threshold voltage (Vth albeit with slightly higher off-state current. More importantly, the mobility of TFTs with HfSiOx gate dielectric is 1.7 times that of TFTs with conventional deposited-SiO2 gate dielectric.

    原文English
    頁(從 - 到)902-904
    頁數3
    期刊Ieee Electron Device Letters
    28
    發行號10
    DOIs
    出版狀態Published - 10月 2007

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