摘要
We have investigated the lightly-doped drain (LDD) polysilicon thin-film transistors (poly-Si TFTs) with a series of multi-channel with different widths. The ten 67 nm-wide split channels TFT has best gate control due to its tri-gate structure, and has lowest poly-Si grain boundary defects, which were passivated by NH3 plasma effectively due to its split nano-wires structure. The proposed TFT exhibits high performance electrical characteristics, such as a high ON/OFF current ratio (>109), a steep subthreshold slope (SS) of 137 mV/decade, an absence of drain-induced barrier lowering (DIBL), suppressed kink-effect, and superior reliability.
原文 | English |
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文章編號 | 1419289 |
頁(從 - 到) | 777-780 |
頁數 | 4 |
期刊 | Technical Digest - International Electron Devices Meeting, IEDM |
DOIs | |
出版狀態 | Published - 13 12月 2004 |
事件 | IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, 美國 持續時間: 13 12月 2004 → 15 12月 2004 |