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High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response
Srinivasa Reddy Tamalampudi
, Yi Ying Lu
, U. Rajesh Kumar
, Raman Sankar
, Chun-Da Chun-Da Liao
, Karukanara Moorthy B
, Che-Hsuan Cheng
, Fang-Cheng Chou
,
Yit-Tsong Chen
*
*
此作品的通信作者
力積電-陽明交大研究中心
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引文 斯高帕斯(Scopus)
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Keyphrases
High Performance
100%
Silica
100%
Photodetector
100%
Few-layer
100%
Broad Spectral Response
100%
InSe
100%
Si Substrate
50%
Two-dimensional Crystals
50%
Ultrathin
25%
Response Time
25%
Flexible Substrate
25%
Photoresponsivity
25%
Near-infrared
25%
Long-term Stability
25%
Flexible Optoelectronic Devices
25%
Flexible Optoelectronics
25%
Polyethylene Terephthalate
25%
Visible-infrared
25%
GaSe
25%
High Photoresponsivity
25%
Two-dimensional Heterostructure
25%
Photoswitches
25%
Active Components
25%
Polyethylene Terephthalate Film
25%
Heterostructure Device
25%
Broadband Photodetection
25%
Graphene-like MoS2
25%
Engineering
Spectral Response
100%
Silicon Dioxide
100%
Photometer
100%
Two Dimensional
75%
Si Substrate
50%
Optoelectronics
50%
Heterojunctions
25%
Response Time
25%
Flexible Substrate
25%
Nanoscale
25%
Dependent Property
25%
Graphene
25%
Promising Candidate
25%
Photodetection
25%
Optoelectronic Device
25%
Term Stability
25%
Infrared Region
25%
Active Component
25%
Molybdenum Disulfide
25%
Material Science
Polyethylene Terephthalate
100%
Film
50%
Graphene
50%
Heterojunction
50%