High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications

Hang Hu; Shi Jin Ding; H. F. Lim; Chunxiang Zhu; M. F. Li; S. J. Kim; X. F. Yu; J. H. Chen; Y. F. Yong; Byung Jin Cho; D. S.H. Chan; Subhash C. Rustagi; M. B. Yu; C. H. Tung; Anyan Du; Doan My; P. D. Foo; Albert Chin; Dim Lee Kwong

High Performance ALD HfO ₂-Al ₂O ₃ Laminate MIM Capacitors for RF and Mixed Signal IC Applications

Hang Hu^*
, Shi Jin Ding
, H. F. Lim
, Chunxiang Zhu
, M. F. Li
, S. J. Kim
, X. F. Yu
, J. H. Chen
, Y. F. Yong
, Byung Jin Cho
, D. S.H. Chan
, Subhash C. Rustagi
, M. B. Yu
, C. H. Tung
, Anyan Du
, Doan My
, P. D. Foo
, Albert Chin
, Dim Lee Kwong

^*此作品的通信作者

研究成果: Conference article › 同行評審

40 引文斯高帕斯（Scopus）

摘要

In this paper, high performance ALD HfO ₂-Al ₂O ₃ laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm ² from 10 kHz to 20 GHz, low leakage current of 7.45×10 ^-9 A/cm ²@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO ₂-Al ₂O ₃ laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.

原文	English
頁（從 - 到）	379-382
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
出版狀態	Published - 12月 2003
事件	IEEE International Electron Devices Meeting - Washington, DC, 美國持續時間: 8 12月 2003 → 10 12月 2003

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Hu, H., Ding, S. J., Lim, H. F., Zhu, C., Li, M. F., Kim, S. J., Yu, X. F., Chen, J. H., Yong, Y. F., Cho, B. J., Chan, D. S. H., Rustagi, S. C., Yu, M. B., Tung, C. H., Du, A., My, D., Foo, P. D., Chin, A., & Kwong, D. L. (2003). High Performance ALD HfO ₂-Al ₂O ₃ Laminate MIM Capacitors for RF and Mixed Signal IC Applications. Technical Digest - International Electron Devices Meeting, 379-382.

@article{cef85930291f48298da3696df98778df,

title = "High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications",

abstract = "In this paper, high performance ALD HfO 2-Al 2O 3 laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm 2 from 10 kHz to 20 GHz, low leakage current of 7.45×10 -9 A/cm 2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO 2-Al 2O 3 laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.",

author = "Hang Hu and Ding, \{Shi Jin\} and Lim, \{H. F.\} and Chunxiang Zhu and Li, \{M. F.\} and Kim, \{S. J.\} and Yu, \{X. F.\} and Chen, \{J. H.\} and Yong, \{Y. F.\} and Cho, \{Byung Jin\} and Chan, \{D. S.H.\} and Rustagi, \{Subhash C.\} and Yu, \{M. B.\} and Tung, \{C. H.\} and Anyan Du and Doan My and Foo, \{P. D.\} and Albert Chin and Kwong, \{Dim Lee\}",

year = "2003",

month = dec,

language = "English",

pages = "379--382",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting ; Conference date: 08-12-2003 Through 10-12-2003",

}

TY - JOUR

T1 - High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications

AU - Hu, Hang

AU - Ding, Shi Jin

AU - Lim, H. F.

AU - Zhu, Chunxiang

AU - Li, M. F.

AU - Kim, S. J.

AU - Yu, X. F.

AU - Chen, J. H.

AU - Yong, Y. F.

AU - Cho, Byung Jin

AU - Chan, D. S.H.

AU - Rustagi, Subhash C.

AU - Yu, M. B.

AU - Tung, C. H.

AU - Du, Anyan

AU - My, Doan

AU - Foo, P. D.

AU - Chin, Albert

AU - Kwong, Dim Lee

PY - 2003/12

Y1 - 2003/12

N2 - In this paper, high performance ALD HfO 2-Al 2O 3 laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm 2 from 10 kHz to 20 GHz, low leakage current of 7.45×10 -9 A/cm 2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO 2-Al 2O 3 laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.

AB - In this paper, high performance ALD HfO 2-Al 2O 3 laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm 2 from 10 kHz to 20 GHz, low leakage current of 7.45×10 -9 A/cm 2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO 2-Al 2O 3 laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.

UR - https://www.scopus.com/pages/publications/17644439382

M3 - Conference article

AN - SCOPUS:17644439382

SN - 0163-1918

SP - 379

EP - 382

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications

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High Performance ALD HfO ₂-Al ₂O ₃ Laminate MIM Capacitors for RF and Mixed Signal IC Applications