High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications

Hang Hu; Shi Jin Ding; H. F. Lim; Chunxiang Zhu; M. F. Li; S. J. Kim; X. F. Yu; J. H. Chen; Y. F. Yong; Byung Jin Cho; D. S.H. Chan; Subhash C. Rustagi; M. B. Yu; C. H. Tung; Anyan Du; Doan My; P. D. Foo; Albert Chin; Dim Lee Kwong

High Performance ALD HfO ₂-Al ₂O ₃ Laminate MIM Capacitors for RF and Mixed Signal IC Applications

Hang Hu^*, Shi Jin Ding, H. F. Lim, Chunxiang Zhu, M. F. Li, S. J. Kim, X. F. Yu, J. H. Chen, Y. F. Yong, Byung Jin Cho, D. S.H. Chan, Subhash C. Rustagi, M. B. Yu, C. H. Tung, Anyan Du, Doan My, P. D. Foo, Albert Chin, Dim Lee Kwong

^*此作品的通信作者

研究成果: Conference article › 同行評審

39 引文斯高帕斯（Scopus）

摘要

In this paper, high performance ALD HfO ₂-Al ₂O ₃ laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm ² from 10 kHz to 20 GHz, low leakage current of 7.45×10 ^-9 A/cm ²@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO ₂-Al ₂O ₃ laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.

原文	English
頁（從 - 到）	379-382
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
出版狀態	Published - 12月 2003
事件	IEEE International Electron Devices Meeting - Washington, DC, 美國持續時間: 8 12月 2003 → 10 12月 2003

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Hu, H., Ding, S. J., Lim, H. F., Zhu, C., Li, M. F., Kim, S. J., Yu, X. F., Chen, J. H., Yong, Y. F., Cho, B. J., Chan, D. S. H., Rustagi, S. C., Yu, M. B., Tung, C. H., Du, A., My, D., Foo, P. D., Chin, A., & Kwong, D. L. (2003). High Performance ALD HfO ₂-Al ₂O ₃ Laminate MIM Capacitors for RF and Mixed Signal IC Applications. Technical Digest - International Electron Devices Meeting, 379-382.

@article{cef85930291f48298da3696df98778df,

title = "High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications",

abstract = "In this paper, high performance ALD HfO 2-Al 2O 3 laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm 2 from 10 kHz to 20 GHz, low leakage current of 7.45×10 -9 A/cm 2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO 2-Al 2O 3 laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.",

author = "Hang Hu and Ding, {Shi Jin} and Lim, {H. F.} and Chunxiang Zhu and Li, {M. F.} and Kim, {S. J.} and Yu, {X. F.} and Chen, {J. H.} and Yong, {Y. F.} and Cho, {Byung Jin} and Chan, {D. S.H.} and Rustagi, {Subhash C.} and Yu, {M. B.} and Tung, {C. H.} and Anyan Du and Doan My and Foo, {P. D.} and Albert Chin and Kwong, {Dim Lee}",

year = "2003",

month = dec,

language = "English",

pages = "379--382",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting ; Conference date: 08-12-2003 Through 10-12-2003",

}

TY - JOUR

T1 - High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications

AU - Hu, Hang

AU - Ding, Shi Jin

AU - Lim, H. F.

AU - Zhu, Chunxiang

AU - Li, M. F.

AU - Kim, S. J.

AU - Yu, X. F.

AU - Chen, J. H.

AU - Yong, Y. F.

AU - Cho, Byung Jin

AU - Chan, D. S.H.

AU - Rustagi, Subhash C.

AU - Yu, M. B.

AU - Tung, C. H.

AU - Du, Anyan

AU - My, Doan

AU - Foo, P. D.

AU - Chin, Albert

AU - Kwong, Dim Lee

PY - 2003/12

Y1 - 2003/12

N2 - In this paper, high performance ALD HfO 2-Al 2O 3 laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm 2 from 10 kHz to 20 GHz, low leakage current of 7.45×10 -9 A/cm 2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO 2-Al 2O 3 laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.

AB - In this paper, high performance ALD HfO 2-Al 2O 3 laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm 2 from 10 kHz to 20 GHz, low leakage current of 7.45×10 -9 A/cm 2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO 2-Al 2O 3 laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.

UR - http://www.scopus.com/inward/record.url?scp=17644439382&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:17644439382

SN - 0163-1918

SP - 379

EP - 382

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications

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High Performance ALD HfO ₂-Al ₂O ₃ Laminate MIM Capacitors for RF and Mixed Signal IC Applications