High performance A-Igzo TFT with nano-dots doping

Hsiao-Wen Zan; Wu Wei Tsai; Chia Hsin Chen; Chuang Chuang Tsai; Hsin-Fei Meng

doi:10.1889/1.3621299

High performance A-Igzo TFT with nano-dots doping

Hsiao-Wen Zan^*, Wu Wei Tsai, Chia Hsin Chen, Chuang Chuang Tsai, Hsin-Fei Meng

^*此作品的通信作者

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

A high mobility (̃79 cm ²Vs) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with high output driving current has been demonstrated. We used a new structure with nano-dots doping on the channel of semiconductor devices. This device is proposed to increase the field-effect mobility 17 times larger than that of the control sample. The influence of dots concentration and the doping concentration on device characteristics were investigated. In addition, we also studied the bottom gate device with NDD. We successfully demonstrate an effective and simple concept to improve device characteristics.

原文	English
頁（從 - 到）	28-31
頁數	4
期刊	Digest of Technical Papers - SID International Symposium
卷	42
發行號	1
DOIs	https://doi.org/10.1889/1.3621299
出版狀態	Published - 1 6月 2011
事件	49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 - Los Angeles, CA, 美國持續時間: 15 5月 2011 → 20 5月 2011

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title = "High performance A-Igzo TFT with nano-dots doping",

abstract = "A high mobility {\~(}79 cm 2Vs) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with high output driving current has been demonstrated. We used a new structure with nano-dots doping on the channel of semiconductor devices. This device is proposed to increase the field-effect mobility 17 times larger than that of the control sample. The influence of dots concentration and the doping concentration on device characteristics were investigated. In addition, we also studied the bottom gate device with NDD. We successfully demonstrate an effective and simple concept to improve device characteristics.",

author = "Hsiao-Wen Zan and Tsai, {Wu Wei} and Chen, {Chia Hsin} and Tsai, {Chuang Chuang} and Hsin-Fei Meng",

year = "2011",

month = jun,

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doi = "10.1889/1.3621299",

language = "English",

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T1 - High performance A-Igzo TFT with nano-dots doping

AU - Zan, Hsiao-Wen

AU - Tsai, Wu Wei

AU - Chen, Chia Hsin

AU - Tsai, Chuang Chuang

AU - Meng, Hsin-Fei

PY - 2011/6/1

Y1 - 2011/6/1

N2 - A high mobility (̃79 cm 2Vs) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with high output driving current has been demonstrated. We used a new structure with nano-dots doping on the channel of semiconductor devices. This device is proposed to increase the field-effect mobility 17 times larger than that of the control sample. The influence of dots concentration and the doping concentration on device characteristics were investigated. In addition, we also studied the bottom gate device with NDD. We successfully demonstrate an effective and simple concept to improve device characteristics.

AB - A high mobility (̃79 cm 2Vs) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with high output driving current has been demonstrated. We used a new structure with nano-dots doping on the channel of semiconductor devices. This device is proposed to increase the field-effect mobility 17 times larger than that of the control sample. The influence of dots concentration and the doping concentration on device characteristics were investigated. In addition, we also studied the bottom gate device with NDD. We successfully demonstrate an effective and simple concept to improve device characteristics.

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U2 - 10.1889/1.3621299

DO - 10.1889/1.3621299

M3 - Article

AN - SCOPUS:84863213644

SN - 0097-966X

VL - 42

SP - 28

EP - 31

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011

Y2 - 15 May 2011 through 20 May 2011

ER -

High performance A-Igzo TFT with nano-dots doping

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