High performance A-Igzo TFT with nano-dots doping

Hsiao-Wen Zan*, Wu Wei Tsai, Chia Hsin Chen, Chuang Chuang Tsai, Hsin-Fei Meng

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

A high mobility (̃79 cm 2Vs) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with high output driving current has been demonstrated. We used a new structure with nano-dots doping on the channel of semiconductor devices. This device is proposed to increase the field-effect mobility 17 times larger than that of the control sample. The influence of dots concentration and the doping concentration on device characteristics were investigated. In addition, we also studied the bottom gate device with NDD. We successfully demonstrate an effective and simple concept to improve device characteristics.

原文English
頁(從 - 到)28-31
頁數4
期刊Digest of Technical Papers - SID International Symposium
42
發行號1
DOIs
出版狀態Published - 1 6月 2011
事件49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 - Los Angeles, CA, United States
持續時間: 15 5月 201120 5月 2011

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