High performance 0.1 μm dynamic threshold MOSFET using indium channel implantation

Sun Jay Chang; Chun Yen Chang; Tien-Sheng Chao; Tiao Yuan Huang

doi:10.1109/55.823577

High performance 0.1 μm dynamic threshold MOSFET using indium channel implantation

Sun Jay Chang, Chun Yen Chang, Tien-Sheng Chao, Tiao Yuan Huang

電子物理學系

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

摘要

In this letter, we demonstrate a high-performance 0.1 μm Dynamic Threshold Voltage MOSFET (DTMOS) for ultra-low-voltage (i.e., <0.7 V) operations. Devices are realized by using super-steep-retrograde indium-channel profile. The steep indium-implanted-channel DTMOS can achieve a large body-effect-factor and a low V_th simultaneously, which results in an excellent performance for the indium-implanted DTMOS.

原文	English
頁（從 - 到）	127-129
頁數	3
期刊	IEEE Electron Device Letters
卷	21
發行號	3
DOIs	https://doi.org/10.1109/55.823577
出版狀態	Published - 1 3月 2000

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AB - In this letter, we demonstrate a high-performance 0.1 μm Dynamic Threshold Voltage MOSFET (DTMOS) for ultra-low-voltage (i.e., <0.7 V) operations. Devices are realized by using super-steep-retrograde indium-channel profile. The steep indium-implanted-channel DTMOS can achieve a large body-effect-factor and a low Vth simultaneously, which results in an excellent performance for the indium-implanted DTMOS.

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High performance 0.1 μm dynamic threshold MOSFET using indium channel implantation

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