In this letter, we demonstrate a high-performance 0.1 μm Dynamic Threshold Voltage MOSFET (DTMOS) for ultra-low-voltage (i.e., <0.7 V) operations. Devices are realized by using super-steep-retrograde indium-channel profile. The steep indium-implanted-channel DTMOS can achieve a large body-effect-factor and a low Vth simultaneously, which results in an excellent performance for the indium-implanted DTMOS.
|頁（從 - 到）||127-129|
|期刊||IEEE Electron Device Letters|
|出版狀態||Published - 1 3月 2000|