High-peak-power subnanosecond diode-pumped passively Q-switched microchip laser

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

Diode-pumped passively Q-switched solid-state laser with extremely short high-peak-power pulses are of potential interest for numerous applications. In this paper we present a resonator that is formed by a coated c-cut Nd:GdVO 4 or Nd:YVO4 crystal and a coated Cr/sup 4+/:YAG crystal. The studies of the present performance indicate that c-cut Nd:GdVO4 and Nd:YVO4 crystal are very convenient material for short pulse (sub-nanosecond) and high-peak power lasers. It is demonstrated that at 2 W pump power, 17.8 nJ pulses of 0.85 ns duration at a pulse repetition rate of 13 kHz can be generated in the c-cut Nd:GdVO4 and 18 nJ pulses of 0.85 ns duration at a pulse repetition rate of 13.5 kHz at 2.4 W pump power in the c-cut Nd:YVO4.

原文English
主出版物標題2003 Conference on Lasers and Electro-Optics Europe, CLEO/EUROPE 2003
頁數1
DOIs
出版狀態Published - 1 12月 2003
事件2003 Conference on Lasers and Electro-Optics Europe, CLEO/EUROPE 2003 - Munich, Germany
持續時間: 22 6月 200327 6月 2003

出版系列

名字Conference on Lasers and Electro-Optics Europe - Technical Digest

Conference

Conference2003 Conference on Lasers and Electro-Optics Europe, CLEO/EUROPE 2003
國家/地區Germany
城市Munich
期間22/06/0327/06/03

指紋

深入研究「High-peak-power subnanosecond diode-pumped passively Q-switched microchip laser」主題。共同形成了獨特的指紋。

引用此