摘要
We demonstrate a high-peak-power quasi-continuous-wave diode-pumped passive Q-switched Nd:YAG laser at 946 nm. We make a thorough comparison of the output performance between the saturable absorbers of InGaAs quantum wells (QWs) and a Cr4+:YAG crystal. Experimental results reveal that the saturable absorber of InGaAs QWs is superior to the Cr4+:YAG crystal because of the low nonsaturable losses and leads to a pulse energy of 330 μJ with a peak power greater than 11 kW.
原文 | English |
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頁(從 - 到) | 429-432 |
頁數 | 4 |
期刊 | Applied Physics B: Lasers and Optics |
卷 | 91 |
發行號 | 3-4 |
DOIs | |
出版狀態 | Published - 6月 2008 |