High-peak-power diode-pumped actively Q-switched Nd:YAG intracavity Raman laser with an undoped YVO4 crystal

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

The efficient stimulated Raman scattering conversion in a diode-pumped actively Q-switched Nd:YAG laser was achieved with an undoped YVO4 crystal as a Raman shifter. With an incident pump power of 16.2 W, 1176-nm first Stokes average output power of 2.97 W was generated at a pulse repetition rate of 50 kHz. The maximum pulse energy is higher than 83 μJ at both 20 kHz and 30 kHz. With mode-locked modulation, the effective pulse width far above threshold is usually below 5 ns. With an incident pump power of 7.62 W, the peak-power of 43.5 kW was demonstrated at 20 kHz.

原文English
主出版物標題Solid State Lasers XVII
主出版物子標題Technology and Devices
DOIs
出版狀態Published - 7 5月 2008
事件Solid State Lasers XVII: Technology and Devices - San Jose, CA, United States
持續時間: 20 1月 200824 1月 2008

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
6871
ISSN(列印)0277-786X

Conference

ConferenceSolid State Lasers XVII: Technology and Devices
國家/地區United States
城市San Jose, CA
期間20/01/0824/01/08

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