High On-State Current in Chemical Vapor Deposited Monolayer MoS2nFETs with Sn Ohmic Contacts

Ang Sheng Chou, Chao Ching Cheng, San Lin Liew, Po Hsun Ho, Shih Yun Wang, Yu Chen Chang, Che Kang Chang, Yuan Chun Su, Zheng Da Huang, Fang Yu Fu, Chen Feng Hsu, Yun Yan Chung, Wen Hao Chang, Lain Jong Li*, Chih I. Wu

*此作品的通信作者

    研究成果: Article同行評審

    摘要

    Proving the device performance and process feasibility is imperative for the realization of two-dimensional (2D) semiconductor electronics. In this work, we have successfully adopted Tin (Sn) as the Ohmic contact metal to monolayer molybdenum disulfide (MoS2) grown by chemical vapor deposition (CVD) and demonstrated superior short channel n-type field effect transistor (nFET) performance reaching an ON-current of 480~μ A/μ m and keeping the OFF-current below 0.1 nA/ μ m at V_DS = 1 V. These efforts are close to the low power specification of Si transistors in the metrics of International Roadmap for Devices and Systems (IRDS). The performance improvement could be attributed to the re-melting behavior of Sn metal. We suggest that the Sn deposited at lower temperatures could reduce the formation of interfacial defects caused by heat, and high-melting-point capping metal also could assist the re-melting phenomenon of underlying Sn contact layer. These process modifications are helpful to form smooth Sn coverage on MoS2, thereby reducing the contact resistance to 0.84 kOmega cdot μ m. This work provides a practical pathway to form low-resistance metal contact on 2D semiconductors for performance improvement.

    原文English
    文章編號9311615
    頁(從 - 到)272-275
    頁數4
    期刊Ieee Electron Device Letters
    42
    發行號2
    DOIs
    出版狀態Published - 二月 2021

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